X-On Electronics has gained recognition as a prominent supplier of 2SC5001TLQ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5001TLQ Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5001TLQ ROHM

2SC5001TLQ electronic component of ROHM
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See Product Specifications
Part No.2SC5001TLQ
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN; HFE RANK Q CPT3
Datasheet: 2SC5001TLQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.4625 ea
Line Total: USD 1156.25 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.981

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.6081
5000 : USD 0.5631
7500 : USD 0.5631
10000 : USD 0.5631

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.4625

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.4939
5000 : USD 0.4741

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 21
Multiples : 1
21 : USD 1.2277

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC5001TLQ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5001TLQ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Collector CPT3 Parameter Value V 20V CEO Base I 10A C Emitter 2SC5001 lFeatures (SC-63) <SOT-428> 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low V CE(sat) V = 0.25V(Max.) CE(sat) (I /I = 4A/ 0.05A) C B 4) Large collector current : I = 10A (DC Max.) C 5) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver , LED driver Base Power supply , strobe Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2SC5001 CPT3 6595 TL 330 16 2,500 C5001 www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.B 1/6 Not Recommended for New DesignsData Sheet 2SC5001 lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 20 V CEO V Emitter-base voltage 6 V EBO I DC 10 A C Collector current *1 15 A Pulsed I CP *2 1 W P D Power dissipation *3 10 W P D T 150 C Junction temperature j T Range of storage temperature -55 to +150 C stg *1 Pw=10ms , single pulse *2 Mounted on a substrate *3 Tc=25C lElectrical characteristics (Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = 1mA 20 - - V CEO C breakdown voltage Collector-base BV I = 50mA 30 - - V CBO C breakdown voltage Emitter-base BV I = 50mA 6 - - V EBO E breakdown voltage Collector cut-off current I V = 20V - - 1 mA CBO CB Emitter cut-off current I V = 5V - - 1 mA EBO EB Collector-emitter V I = 4A, I = 0.05A - 0.13 0.25 V CE(sat) C B saturation voltage Base-emitter V I = 4A, I = 0.05A - 0.9 1.2 V BE(sat) C B saturation voltage h 1 V = 2V, I = 0.5A 120 - 390 - FE CE C DC current gain h 2 V = 2V, I = 4A 82 - - - FE CE C V = 5V, I = -1.5A CE E f Transition frequency - 150 - MHz T f=50MH Z V = 10V, I = 0A CB E C Output capacitance - 220 - pF ob f = 1MHz lh rank categories FE Rank Q R h 120 to 270 180 to 390 FE www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.B 2/6 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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