2SC5053T100Q ROHM

+ + 2SC5053 Transistors Medium power transistor (50V, 1A) 2SC5053 z Features z External dimensions (Unit : mm) 1) Low saturation voltage, typically V = 0.12V at I / MPT3 CE(sat) C 4.5 I = 500mA / 50mA 1.5 B 1.6 2) P =2W (on 40400.7mm ceramic board) C 3) Complements the 2SA1900 (1) (2) (3) 0.4 0.5 0.4 0.4 1.5 1.5 3.0 (1)Base (2)Collector (3)Emitter z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO 60 V Collector-base voltage VCEO 50 V Collector-emitter voltage VEBO 5 V Emitter- base voltage 1 A Collector current IC 2 A (Pulse) 1 0.5 W Collector power dissipation PC 2 W 2 Collector power dissipation Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse Pw=100ms, Duty=1/2 2 When mounted on a 40 40 0.7mm seramic board. z External dimensions (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 V IC = 50A Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA Emitter-base breakdown voltage 5 V IE = 50A BVEBO Collector cutoff current ICBO 0.1 A VCB = 40V Emitter cutoff current 0.5 A VEB = 4V IEBO Collector-emitter saturation voltage VCE(sat) 0.4 V IC/IB = 500mA/50mA DC current transfer ratio hFE 120 270 VCE/IC = 3V/0.5A Transition frequency fT 150 MHz VCE = 5V , IE = 50mA , f=100MHz Output capacitance Cob 20 pF VCB = 10V , IE = 0A , f=1MHz z Packaging specifications and hFE Type 2SC5053 Package MPT3 h QR FE Marking CG Code T100 Basic ordering unit (pleces) 1000 Denotes hFE Rev.A 1/2 1.0 2.5 0.5 4.02SC5053 Transistors z Electric characteristics curves 1000 1000 1000 Ta=25C 9mA Ta=25C 10mA IC/IB=10 500 500 900 800 VCE=3V 200 200 700 100 100 600 50 50 500 20 20 400 10 10 300 5 5 200 2 2 100 1 1 0 1m 10m 100m 1 2 0.001 0.005 0.02 0.05 0.1 0.2 0.5 1 2 0 12 3 4 5 0.002 0.01 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output characteristics Fig.3 Collector-emitter saturation voltage Fig.2 DC current gain vs.collector current vs. collector current 5 1000 Ta=25C Ta=25C 200 f=1MHz VCE=5V IC Max. (Pulse ) 500 IE=0A 2 100 10ms 100ms 200 1 50 100 0.5 50 20 0.2 DC 20 10 0.1 10 5 0.05 5 2 Ta=25C 0.02 2 Single 1 nonrepeatitive pulse 0.01 1 0.1 0.2 0.5 1 25 10 20 0.2 0.5 12 5 10 20 50 100 1m 10m 0.1 1 COLLECTOR TO EMITTER VOLTAGE : ICE (V) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER CURRENT : IE (A) Fig.6 Safe operating area Fig.5 Collector output capacitance Fig.4 Gain bandwith product vs. collector-base voltage vs. emitter current Rev.A 2/2 3mA 2mA IB=1mA 4mA 5mA 6mA 7mA 8mA COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHz) COLLECTOR OUTPUT CAPACITANCE : Cob( (pF) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (A)