X-On Electronics has gained recognition as a prominent supplier of 2SC5053T100R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5053T100R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5053T100R ROHM

2SC5053T100R electronic component of ROHM
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Part No.2SC5053T100R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 1 A 150MHz 500 mW Surface Mount MPT3
Datasheet: 2SC5053T100R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.1323 ea
Line Total: USD 132.3 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.3783

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.1323
2000 : USD 0.124
4000 : USD 0.1167
6000 : USD 0.1102
10000 : USD 0.1073

0
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1244
50 : USD 0.1219
150 : USD 0.1203
500 : USD 0.1188

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6226
10 : USD 0.5984
100 : USD 0.5456
500 : USD 0.3806
1000 : USD 0.2002
2000 : USD 0.1584
10000 : USD 0.154
25000 : USD 0.1496
50000 : USD 0.1463

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SC5053T100R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5053T100R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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+ + 2SC5053 Transistors Medium power transistor (50V, 1A) 2SC5053 z Features z External dimensions (Unit : mm) 1) Low saturation voltage, typically V = 0.12V at I / MPT3 CE(sat) C 4.5 I = 500mA / 50mA 1.5 B 1.6 2) P =2W (on 40400.7mm ceramic board) C 3) Complements the 2SA1900 (1) (2) (3) 0.4 0.5 0.4 0.4 1.5 1.5 3.0 (1)Base (2)Collector (3)Emitter z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO 60 V Collector-base voltage VCEO 50 V Collector-emitter voltage VEBO 5 V Emitter- base voltage 1 A Collector current IC 2 A (Pulse) 1 0.5 W Collector power dissipation PC 2 W 2 Collector power dissipation Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse Pw=100ms, Duty=1/2 2 When mounted on a 40 40 0.7mm seramic board. z External dimensions (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 V IC = 50A Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA Emitter-base breakdown voltage 5 V IE = 50A BVEBO Collector cutoff current ICBO 0.1 A VCB = 40V Emitter cutoff current 0.5 A VEB = 4V IEBO Collector-emitter saturation voltage VCE(sat) 0.4 V IC/IB = 500mA/50mA DC current transfer ratio hFE 120 270 VCE/IC = 3V/0.5A Transition frequency fT 150 MHz VCE = 5V , IE = 50mA , f=100MHz Output capacitance Cob 20 pF VCB = 10V , IE = 0A , f=1MHz z Packaging specifications and hFE Type 2SC5053 Package MPT3 h QR FE Marking CG Code T100 Basic ordering unit (pleces) 1000 Denotes hFE Rev.A 1/2 1.0 2.5 0.5 4.02SC5053 Transistors z Electric characteristics curves 1000 1000 1000 Ta=25C 9mA Ta=25C 10mA IC/IB=10 500 500 900 800 VCE=3V 200 200 700 100 100 600 50 50 500 20 20 400 10 10 300 5 5 200 2 2 100 1 1 0 1m 10m 100m 1 2 0.001 0.005 0.02 0.05 0.1 0.2 0.5 1 2 0 12 3 4 5 0.002 0.01 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output characteristics Fig.3 Collector-emitter saturation voltage Fig.2 DC current gain vs.collector current vs. collector current 5 1000 Ta=25C Ta=25C 200 f=1MHz VCE=5V IC Max. (Pulse ) 500 IE=0A 2 100 10ms 100ms 200 1 50 100 0.5 50 20 0.2 DC 20 10 0.1 10 5 0.05 5 2 Ta=25C 0.02 2 Single 1 nonrepeatitive pulse 0.01 1 0.1 0.2 0.5 1 25 10 20 0.2 0.5 12 5 10 20 50 100 1m 10m 0.1 1 COLLECTOR TO EMITTER VOLTAGE : ICE (V) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER CURRENT : IE (A) Fig.6 Safe operating area Fig.5 Collector output capacitance Fig.4 Gain bandwith product vs. collector-base voltage vs. emitter current Rev.A 2/2 3mA 2mA IB=1mA 4mA 5mA 6mA 7mA 8mA COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHz) COLLECTOR OUTPUT CAPACITANCE : Cob( (pF) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (A)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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