X-On Electronics has gained recognition as a prominent supplier of 2SC5585TL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5585TL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5585TL ROHM

2SC5585TL electronic component of ROHM
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See Product Specifications
Part No.2SC5585TL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 12 V 500 mA 320MHz 150 mW Surface Mount EMT3
Datasheet: 2SC5585TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0595 ea
Line Total: USD 0.6 
Availability - 296
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 10  Multiples: 10
Pack Size: 10

 2SC5585TL More Buying Options & Price Grid(s)

Availability Price Quantity
296
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0595
100 : USD 0.0528
300 : USD 0.0494
3000 : USD 0.0398
6000 : USD 0.0376
9000 : USD 0.0367

6773
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3905
10 : USD 0.2618
100 : USD 0.1441
1000 : USD 0.1265
3000 : USD 0.1045
9000 : USD 0.1001

5619
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 311
Multiples : 1
311 : USD 0.3281
500 : USD 0.3163
1000 : USD 0.3059
2500 : USD 0.2969
5000 : USD 0.2888

23246
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 117
Multiples : 1
117 : USD 0.3478
200 : USD 0.317
1000 : USD 0.2633
2000 : USD 0.2455
12000 : USD 0.2178

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC5585TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5585TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SC5663 / 2SC5585 Datasheet Low frequency transistor (12V, 500mA) llOutline Parameter Value SOT-723 SOT-416 V 12V CEO I 500mA C 2SC5663 2SC5585 (VMT3) (EMT3) llFeatures 1)High current 2)Low V . CE(sat) V 250mV at I =200mA/I =10mA CE(sat) C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llInner circuit 2SC5663 2SC5585 llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SC5663 1212 T2L 180 8 8000 BX (VMT3) SOT-416 2SC5585 1616 TL 180 8 3000 BX (EMT3) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/7 20150904 - Rev.003 2SC5663 / 2SC5585 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO Collector-emitter voltage V 12 V CEO Emitter-base voltage V 6 V EBO I 500 mA C Collector current *1 I 1.0 A CP 2SC5663 150 *2 Power dissipation P mW D 2SC5585 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 6 - - V EBO E Collector cut-off current I V = 15V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 90 250 mV CE(sat) C B DC current gain h V = 2V, I = 10mA 270 - 680 - FE CE C V = 2V, I = -10mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7.5 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land www.rohm.com 2/7 20150904 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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