X-On Electronics has gained recognition as a prominent supplier of 2SC5662T2LP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5662T2LP Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5662T2LP ROHM

2SC5662T2LP electronic component of ROHM
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See Product Specifications
Part No.2SC5662T2LP
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 11 V 50 mA 3.2GHz 150 mW Surface Mount VMT3
Datasheet: 2SC5662T2LP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
354: USD 0.1149 ea
Line Total: USD 40.67 
Availability - 7448
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ: 354  Multiples: 1
Pack Size: 1

 2SC5662T2LP More Buying Options & Price Grid(s)

Availability Price Quantity
7760
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 407
Multiples : 1
407 : USD 0.2506
500 : USD 0.2415
1000 : USD 0.2337
2500 : USD 0.2269
5000 : USD 0.2208

7448
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 354
Multiples : 1
354 : USD 0.1149
500 : USD 0.0889
1000 : USD 0.0806
2000 : USD 0.0733

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC5662T2LP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5662T2LP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SC5662 / 2SC4726 / 2SC4083 2SC3838K Datasheet High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) llOutline Parameter Value VMT3 EMT3 V 11V CEO I 50mA C 2SC5662 2SC4726 SC-105AA SOT-416 llFeatures UMT3 SMT3 1)High transition frequency.(Typ.f =3.2GHz) T 2)Small rbb Cc and high gain.(Typ.4ps) 3)Small NF 2SC4083 2SC3838K SOT-323 SOT-346 llApplication UHF/VHF FREQUENCY CONVERTER, LOCAL OSCILLATOR llInner circuit 2SC4726/2SC4083/2SC3838K 2SC5662 llPackaging specifications Basic Package Taping Reel size Tape width hFE ordering Part No. Package Marking size code (mm) (mm) rank unit.(pcs) 2SC5662 VMT3 1212 T2L 180 8 8000 NP AD 2SC4726 EMT3 1616 TL 180 8 3000 NP AD 2SC4083 UMT3 2021 T106 180 8 3000 NPQ 1D 2SC3838K SMT3 2928 T146 180 8 3000 NPQ AD llNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/9 20150724 - Rev.001 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 20 V CBO V Collector-emitter voltage 11 V CEO V Emitter-base voltage 3 V EBO I Collector current 50 mA C 2SC5662 150 2SC4726 150 *1 P Power dissipation mW D 2SC4083 200 2SC3838K 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 11 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 3 - - V EBO E I Collector cut-off current V = 10V - - 500 nA CBO CB Emitter cut-off current I V = 2V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 5mA - - 500 mV CE(sat) C B DC current gain h V = 10V, I = 5mA 56 - 270 - FE CE C V = 10V, I = -10mA, CE E f Transition frequency 1.4 3.2 - GHz T f = 500MHz V = 10V, I = 0A, CB E C Output capacitance - 0.8 1.5 pF ob f = 1MHz V = 6V, I = 2mA CB C N Noise figure - 3.5 - dB F f = 500MHz, R = 50 g hFE values are calssified as follows : rank N P Q - - h 56-120 82-180 120-270 - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/9 20150724 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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