Power transistor (60V, 3A) 2SC5824 Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) MPT3 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. (1)Base(Gate) Each lead has same dimensions Applications (2)Collector(Drain) (3)Emitter(Sourse) Abbreviated symbol : UP Low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code T100 Basic ordering unit 1000 (pieces) 2SC5824 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V IC 3 A Collector current 1 ICP 6 A 2 PC 500 mW Power dissipation 3 PC 2.0 W Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw=100ms 2 Each terminal mounted on a recommended land. 3 Mounted on a 40x40x0.7(mm) ceramic substrate www.rohm.com 2011.03 - Rev.C 1/3 c 2011 ROHM Co., Ltd. All rights reserved. 2SC5824 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collectorbase breakdown voltage BVCBO 60 V IC=100A Collectoremitter breakdown voltage BVCEO 60 V IC=1mA BVEBO 6 V IE=100A Emitterbase breakdown voltage Collector cut-off current 1.0 A VCB=40V ICBO Emitter cut-off current IEBO 1.0 A VEB=4V 1 Collectoremitter staturation voltage VCE(sat) 200 500 mV IC=2A, IB=200mA DC current gain 120 390 VCE=2V, IC=100mA hFE 1 Transition frequency fT 200 MHz VCE=10V, IE= 100mA, f=10MHz pF VCB=10V, IE=0mA, f=1MHz Collector output capacitance 20 Cob Turn-on time ns ton 50 IC=3A, IB1=300mA ns Storage time tstg 150 IB2= 300mA 2 ns Fall time tf 30 VCC 25V 1 Non repetitive pulse 2 See switching charactaristics measurement circuits hFE RANK QR 120-270 180-390 Electrical characteristic curves 1000 1000 10 Ta=25C VCE=2V VCE=2V VCE=5V Ta=125C Ta= 40C 1 100 100 VCE=3V Ta=25C Ta=100C Ta= 40C Ta=100C VCE=2V Ta=25C 0.1 10 10 Ta=125C 0.01 1 1 0 0.5 1 1.5 2 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector Fig.1 Ground emitter propagation Fig.2 DC current gain vs. collector current characteristics current 10 10 10 Ta=25C IC/IB=10/1 IC/IB=10/1 Ta=125C 1 1 Ta= 40C Ta=100C Ta=25C 1 0.1 0.1 IC/IB=20/1 Ta=25C Ta=125C IC/IB=10/1 Ta=100C Ta= 40C 0.01 0.1 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.6 Base-emitter saturation voltage Fig.4 Collector-emitter saturation voltage Fig.5 Collector-emitter saturation voltage vs. collector current vs. collector current vs. Collector Current www.rohm.com 2011.03 - Rev.C 2/3 c 2011 ROHM Co., Ltd. All rights reserved. COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) COLLECTOR SATURATION DC CURRENT GAIN : hFE VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V)