X-On Electronics has gained recognition as a prominent supplier of 2SC5876T106Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5876T106Q Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5876T106Q ROHM

2SC5876T106Q electronic component of ROHM
2SC5876T106Q ROHM
2SC5876T106Q Bipolar Transistors - BJT
2SC5876T106Q  Semiconductors

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See Product Specifications
Part No. 2SC5876T106Q
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN 60V 0.5A
Datasheet: 2SC5876T106Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2163 ea
Line Total: USD 1.08 
Availability - 1959
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1959
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.2163
50 : USD 0.1887
150 : USD 0.1513
500 : USD 0.1247
3000 : USD 0.1135
6000 : USD 0.1104

258
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7188
10 : USD 0.4538
100 : USD 0.2749
500 : USD 0.209
1000 : USD 0.1903
3000 : USD 0.1551
9000 : USD 0.143
45000 : USD 0.1397

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SC5876T106Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5876T106Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SC5876 Datasheet Medium power transistor (60V, 0.5A) llOutline Parameter Value UMT3 V 60V CEO I 500mA C SOT-323 SC-70 llFeatures 1)High speed switching. llInner circuit (Tf:Typ.:80ns at I =500mA) C 2)Low saturation voltage, typically (Typ.:150mV at I =100mA, I =10mA) C B 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SA2088. llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SC5876 UMT3 2021 T106 180 8 3000 VS www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.2SC5876 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 60 V CEO Emitter-base voltage V 6 V EBO I 500 mA C Collector current *1 I 1.0 A CP *2 Power dissipation P 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 60 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 6 - - V EBO E I Collector cut-off current V = 40V - - 1 A CBO CB Emitter cut-off current I V = 4V - - 1 A EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 150 300 mV CE(sat) C B h DC current gain V = 2V, I = 50mA 120 - 390 - FE CE C V = 10V, I = -100mA, CE E *3 Transition frequency - 300 - MHz f T f = 100MHz V = 10V, I = 0mA, CB E C Output capacitance - 5 - pF ob f = 1MHz *3 I = 500mA, C Turn-On time t - 70 - ns on I = 50mA, B1 I = -50mA, B2 *3 Storage time t - 130 - ns stg V 25V, CC R = 50 L *3 t Fall time - 80 - ns f See test circuit hFE values are calssified as follows : rank Q R - - - hFE 120-270 180-390 - - - *1 Pw=10ms *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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