X-On Electronics has gained recognition as a prominent supplier of 2SC5876T106R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SC5876T106R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SC5876T106R ROHM

2SC5876T106R electronic component of ROHM
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See Product Specifications
Part No.2SC5876T106R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 60 V 500 mA 300MHz 200 mW Surface Mount UMT3
Datasheet: 2SC5876T106R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6325 ea
Line Total: USD 0.63 
Availability - 2524
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 2SC5876T106R More Buying Options & Price Grid(s)

Availability Price Quantity
2524
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6325
10 : USD 0.3993
100 : USD 0.2629
500 : USD 0.209
1000 : USD 0.1903
3000 : USD 0.1463
9000 : USD 0.143
45000 : USD 0.1386

130391
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 97
Multiples : 1
97 : USD 0.4193
110 : USD 0.3705
200 : USD 0.338
500 : USD 0.286
1000 : USD 0.26
2000 : USD 0.2422
6000 : USD 0.2275
12000 : USD 0.2145
24000 : USD 0.1982

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC5876T106R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5876T106R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SC5876 Datasheet Medium power transistor (60V, 0.5A) llOutline Parameter Value UMT3 V 60V CEO I 500mA C SOT-323 SC-70 llFeatures 1)High speed switching. llInner circuit (Tf:Typ.:80ns at I =500mA) C 2)Low saturation voltage, typically (Typ.:150mV at I =100mA, I =10mA) C B 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SA2088. llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SC5876 UMT3 2021 T106 180 8 3000 VS www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.2SC5876 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 60 V CEO Emitter-base voltage V 6 V EBO I 500 mA C Collector current *1 I 1.0 A CP *2 Power dissipation P 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 60 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 6 - - V EBO E I Collector cut-off current V = 40V - - 1 A CBO CB Emitter cut-off current I V = 4V - - 1 A EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 150 300 mV CE(sat) C B h DC current gain V = 2V, I = 50mA 120 - 390 - FE CE C V = 10V, I = -100mA, CE E *3 Transition frequency - 300 - MHz f T f = 100MHz V = 10V, I = 0mA, CB E C Output capacitance - 5 - pF ob f = 1MHz *3 I = 500mA, C Turn-On time t - 70 - ns on I = 50mA, B1 I = -50mA, B2 *3 Storage time t - 130 - ns stg V 25V, CC R = 50 L *3 t Fall time - 80 - ns f See test circuit hFE values are calssified as follows : rank Q R - - - hFE 120-270 180-390 - - - *1 Pw=10ms *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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RHM
ROHM Semicon
ROHM Semiconductor

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