2SC5916TLQ ROHM

2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2.8 TSMT3 1.6 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. (1) Base 4) Complements the 2SA2113 (2) Emitter Each lead has same dimensions 0.3 0.6 (3) Collector Abbreviated symbol : UY Applications Low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Code TL Type Basic ordering unit 3000 (pieces) 2SC5916 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 2 A Collector current 1 ICP 4 A 2 Power dissipation PC 500 mW Tj 150 C Junction temperature Range of storage temperature Tstg 55~+150 C 1 Pw=10ms 2 Each terminal mounted on a recommended land. 1/3 1.9 0.16 0.95 0.95 ( ) ( ) 2 1 0 0.1 (3) 0.7 0.4 0.85 2.9 1.0MAX2SC5916 Transistor Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Collectorbase breakdown voltage BVCEO 30 V IC=100 A BVCBO 30 V Collectoremitter breakdown voltage IC=1mA BVEBO 6 V Emitterbase breakdown voltage IE=100 A Collector cut-off current A VCB=20V ICBO 1.0 Emitter cut-off current VEB=4V IEBO 1.0 A Collectoremitter staturation voltage VCE(sat) 400 IC=1.0A, IB=0.1A 200 mV DC current gain 120 390 hFE VCD=2V, IC=100mA Transition frequency fT 250 MHz VCE=10V, IE=100mA, f=10MHz pF VCB=10V, IE=0, f=1MHz Collector output capacitance 15 Cob Turn-on time Ton 25 ns IC=2A IB1=200mA ns Storage time Tstg 100 IB2=200mA ns Fall time Tf VCC 25V 20 hFE RANK QR 120-270 180-390 Electrical characteristic curves 10 1000 1000 1ms Ta=25C VCE=2V Ta=125C 10ms VCC=25V IC/IB=10/1 Tstg 1 100ms 100 Ta=40C Ta=25C 100 Ton DC Tf 0.1 10 Single non repoetitive pulse 10 0.01 1 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.1 110 100 COLLECTOR CURRENT : IC (A) COLLECTOR EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.2 Switching Time Fig.3 DC current gain vs. collector Fig.1 Safe operating area current 1000 10 10 Ta=25C Ta=25C IC/IB=10/1 VCE=5V 1 1 100 VCE=2V VCE=3V Ta=125C 10 0.1 0.1 Ta=25C IC/IB=20/1 Ta=40C IC/IB=10/1 0.01 0.01 1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage current vs. collector current vs. collector current 2/3 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) SWITCHING TIME (ns) COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) DC CURRENT GAIN : hFE