2SCR293P FRA Datasheet Middle Power Transistor (30V / 1A) AEC-Q101 Qualified llOutline SOT-89 Parameter Value SC-62 V 30V CEO I 1A C MPT3 llFeatures llInner circuit 1) Suitable for Middle Power Driver. 2) Low V CE(sat) V =350mV(Max.). CE(sat) (I /I =500mA/25mA) C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SCR293P FRA 4540 T100 180 12 1000 NV (MPT3) www.rohm.com 1/6 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs2SCR293P FRA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 I 2 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E Collector cut-off current I V = 30V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB *4 Collector-emitter saturation voltage I = 500mA, I = 25mA - 120 350 mV V C B CE(sat) DC current gain h V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA, CE E *4 Transition frequency - 320 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz I = 500mA, C t Turn-On time - 90 - ns on I = 25mA, B1 I = -25mA, B2 t Storage time - 300 - ns stg V 5V, CC R = 10 L Fall time t - 60 - ns f See test circuit *1 Pw=10ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20160920 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs