X-On Electronics has gained recognition as a prominent supplier of 2SCR341QTR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR341QTR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SCR341QTR ROHM

2SCR341QTR electronic component of ROHM
2SCR341QTR ROHM
2SCR341QTR Bipolar Transistors - BJT
2SCR341QTR Semiconductors

Images are for reference only
See Product Specifications
Part No. 2SCR341QTR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 100mA Ic 400V TSMT6
Datasheet: 2SCR341QTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8975 ea
Line Total: USD 0.9 
Availability - 3741
Ship by Tue. 11 Mar to Thu. 13 Mar
MOQ: 1  Multiples: 1
Pack Size: 1

 2SCR341QTR More Buying Options & Price Grid(s)

Availability Price Quantity
3741
Ship by Tue. 11 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 0.8975
10 : USD 0.6175
100 : USD 0.3608
500 : USD 0.2893
1000 : USD 0.275
3000 : USD 0.2244
6000 : USD 0.2178
9000 : USD 0.209

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SCR341QTR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR341QTR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SCR341Q Datasheet NPN 100mA 400V Middle Power Transistor llOutline SOT-457T Parameter Value SC-95 V 400V CEO I 100mA C TSMT6 llFeatures llInner circuit 1) Complementary PNP Types : 2SAR340Q. 2) Low V CE(sat) V =300mV(Max.). CE(sat) (I /I =20mA/2mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-457T 2SCR341Q 2928 TR 180 8 3000 HJ (TSMT6) llNotice Pay attention to electric discharge with high voltage because of fine pin pitch. www.rohm.com 1/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. 2SCR341Q Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 400 V CBO Collector-emitter voltage V 400 V CEO V Emitter-base voltage 7 V EBO I 100 mA C Collector current *1 I 200 mA CP Base current I 30 mA B *2 P 0.5 W D Power dissipation *3 P 1.25 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 400 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 400 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 7 - - V EBO E I Collector cut-off current V = 400V - - 10 A CBO CB I Emitter cut-off current V = 6V - - 10 A EBO EB Collector-emitter saturation voltage V I = 20mA, I = 2mA - 100 300 mV CE(sat) C B DC current gain h V = 10V, I = 10mA 82 - 270 - FE CE C V = 10V, I = 0A, CB E C Output capacitance - 6 - pF ob f = 1MHz hFE values are calssified as follows : rank P Q - - - h 82 - 180 120 - 270 - - - FE *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8 mm) www.rohm.com 2/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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