2SCR372P5 Datasheet Middle Power Transistor(120V/700mA) llOutline SOT-89 Parameter Value SC-62 V 120V CEO I 0.7A C MPT3 llFeatures llInner circuit Low saturation voltage V =300mV(Max.) CE(sat) (I /I =500mA/50mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SCR372P5 4540 T100 180 12 1000 GX (MPT3) www.rohm.com 1/6 20160526 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. 2SCR372P5 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 120 V CBO V Collector-emitter voltage 120 V CEO V Emitter-base voltage 6 V EBO I 0.7 A C Collector current *1 I 1.4 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 120 - - V CEO C voltage BV I = 100A Emitter-base breakdown voltage 6 - - V EBO E I V = 100V Collector cut-off current - - 1.0 A CBO CB I Emitter cut-off current V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 500mA, I = 50mA - 100 300 mV CE(sat) C B h V = 5V, I = 100mA DC current gain 120 - 390 - FE CE C V = 5V, I = -300mA, CE E Transition frequency f - 220 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 8 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Pw=10ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) www.rohm.com 2/6 20160526 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.