2SCR375P5 Middle Power Transistor(120V/1.5A) Datasheet llOutline SOT-89 Parameter Value SC-62 V 120V CEO I 1.5A C MPT3 llFeatures llInner circuit Low saturation voltage V =300mV(Max.) CE(sat) (I /I =800mA/80mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-89 2SCR375P5 4540 T100 180 12 1000 GZ (MPT3) www.rohm.com 1/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. 2SCR375P5 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 120 V CBO V Collector-emitter voltage 120 V CEO V Emitter-base voltage 6 V EBO I 1.5 A C Collector current *1 I 3.0 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 120 - - V CEO C voltage BV I = 100A Emitter-base breakdown voltage 6 - - V EBO E I V = 100V Collector cut-off current - - 1.0 A CBO CB I Emitter cut-off current V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 800mA, I = 80mA - 100 300 mV CE(sat) C B h V = 5V, I = 200mA DC current gain 120 - 390 - FE CE C V = 10V, I = -400mA, CE E Transition frequency f - 200 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) www.rohm.com 2/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.