2SCR502U3 NPN 500mA 30V General purpose transistors Datasheet llOutline Parameter Value V 30V CEO I 0.5A C UMT3 llFeatures llInner circuit 1)General purpose. 2)Complementary PNP types : 2SAR502U3 3)Collector current is large. 4)Low V . CE(sat) llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-323 2SCR502U3 2021 T106 180 8 3000 LW (UMT3) www.rohm.com 1/6 20190603 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. 2SCR502U3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO Collector-emitter voltage V 30 V CEO V Emitter-base voltage 6 V EBO I 0.5 A C Collector current *2 I 1 A CP Base current I 0.15 A B *3 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 25V - - 200 nA CBO CB I V = 4V Emitter cut-off current - - 200 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 100 300 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 200 - 500 - FE CE C V = 10V, I = -100mA, CE E *4 Transition frequency - 360 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 3 - pF ob f = 1MHz *1 Limited by power dissipation. *2 Pw=10ms, Single pulse. *3 Each terminal mounted on a reference land. *4 Pulsed www.rohm.com 2/6 20190603 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.