2SCR502EB / 2SCR502UB NPN 500mA 30V General purpose transistors Datasheet llOutline Parameter Value EMT3F UMT3F V 30V CEO I 0.5A C 2SCR502EB 2SCR502UB SOT-416FL SOT-323FL llFeatures 1)General purpose. llInner circuit 2)Complementary PNP types : 2SAR502EB(EMT3F)/2SAR502UB(UMT3F) 3)Collector current is large. 4)Low V . CE(sat) llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SCR502EB EMT3F 1616 TL 180 8 3000 LW 2SCR502UB UMT3F 2021 TL 180 8 3000 LW www.rohm.com 1/7 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SCR502EB / 2SCR502UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO Collector-emitter voltage V 30 V CEO Emitter-base voltage V 6 V EBO *1 I 0.5 A C Collector current *2 I 1 A CP Base current I 0.15 A B 2SCR502EB 150 *3 P Power dissipation mW D 2SCR502UB 200 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 6 - - V EBO E Collector cut-off current I V = 25V - - 200 nA CBO CB I Emitter cut-off current V = 4V - - 200 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 100 300 mV CE(sat) C B DC current gain h V = 2V, I = 100mA 200 - 500 - FE CE C V = 10V, I = -100mA, CE E *4 Transition frequency - 360 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 3 - pF ob f = 1MHz *1 Limited by power dissipation. *2 Pw=10ms, Single pulse. *3 Each terminal mounted on a reference land. *4 Pulsed www.rohm.com 2/7 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.