X-On Electronics has gained recognition as a prominent supplier of 2SCR522UBTL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR522UBTL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SCR522UBTL ROHM

2SCR522UBTL electronic component of ROHM
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See Product Specifications
Part No.2SCR522UBTL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 20 V 200 mA 400MHz 200 mW Surface Mount UMT3F
Datasheet: 2SCR522UBTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
380: USD 0.1068 ea
Line Total: USD 40.58 
Availability - 13405
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ: 380  Multiples: 1
Pack Size: 1

 2SCR522UBTL More Buying Options & Price Grid(s)

Availability Price Quantity
2577
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 1112
Multiples : 1
1112 : USD 0.0856
2500 : USD 0.083

13405
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 380
Multiples : 1
380 : USD 0.1068
500 : USD 0.1022
1000 : USD 0.0966
2000 : USD 0.0962
3000 : USD 0.0868
6000 : USD 0.0837
12000 : USD 0.0798

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SCR522UBTL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR522UBTL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SCR522M / 2SCR522EB / 2SCR522UB NPN 200mA 20V General Purpose Transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V 20V CEO I 200mA C 2SCR522M 2SCR522EB (VMT3) (EMT3F) SOT-323FL 2SCR522UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary PNP Types: 2SAR522M (VMT3) / 2SAR522EB (EMT3F) / 2SAR522UB (UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SCR522M 1212 T2L 180 8 8000 NC (VMT3) SOT-416FL 2SCR522EB 1616 TL 180 8 3000 NC (EMT3F) SOT-323FL 2SCR522UB 2021 TL 180 8 3000 NC (UMT3F) www.rohm.com 1 / 8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SCR522M / 2SCR522EB / 2SCR522UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 20 V CBO Collector-emitter voltage V 20 V CEO V Emitter-base voltage 5 V EBO I 200 mA C Collector current *1 I 400 mA CP 2SCR522M 150 *2 P Power dissipation 2SCR522EB 150 mW D 2SCR522UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 20 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 20V - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 120 300 mV CE(sat) C B h DC current gain V = 2V, I = 1mA 120 - 560 - FE CE C V = 10V, I = -10mA, CE E f Transition frequency - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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RHM
ROHM Semicon
ROHM Semiconductor

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