X-On Electronics has gained recognition as a prominent supplier of 2SCR523UBTL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR523UBTL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SCR523UBTL ROHM

2SCR523UBTL electronic component of ROHM
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See Product Specifications
Part No.2SCR523UBTL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT Trans NPN GP 50V 0.1A
Datasheet: 2SCR523UBTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1111 ea
Line Total: USD 0.11 
Availability - 35225
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
35225
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1111
10 : USD 0.0748
100 : USD 0.0385
1000 : USD 0.0352
3000 : USD 0.0253
9000 : USD 0.022
24000 : USD 0.0209
99000 : USD 0.0209

12319
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1064
Multiples : 1
1064 : USD 0.0893
2500 : USD 0.0867
5000 : USD 0.0844
10000 : USD 0.0823

46560
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1064
Multiples : 1
1064 : USD 0.1529

81645
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 635
Multiples : 1
635 : USD 0.0639
1000 : USD 0.052
2000 : USD 0.0518
3000 : USD 0.0409
6000 : USD 0.0408
12000 : USD 0.0343
24000 : USD 0.0307

5167
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1064
Multiples : 1
1064 : USD 0.0893
2500 : USD 0.0867
5000 : USD 0.0844

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
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We are delighted to provide the 2SCR523UBTL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR523UBTL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SCR523M / 2SCR523EB / 2SCR523UB NPN 100mA 50V General Purpose Transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V 50V CEO I 100mA C 2SCR523M 2SCR523EB (VMT3) (EMT3F) SOT-323FL 2SCR523UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary PNP Types: 2SAR523M (VMT3) / 2SAR523EB (EMT3F) / 2SAR523UB (UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SCR523M 1212 T2L 180 8 8000 NB (VMT3) SOT-416FL 2SCR523EB 1616 TL 180 8 3000 NB (EMT3F) SOT-323FL 2SCR523UB 2021 TL 180 8 3000 NB (UMT3F) www.rohm.com 1 / 8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SCR523M / 2SCR523EB / 2SCR523UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO Collector-emitter voltage V 50 V CEO V Emitter-base voltage 5 V EBO I 100 mA C Collector current *1 I 200 mA CP 2SCR523M 150 *2 P Power dissipation 2SCR523EB 150 mW D 2SCR523UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 50V - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - 100 300 mV CE(sat) C B h DC current gain V = 6V, I = 1mA 120 - 560 - FE CE C V = 10V, I = -10mA, CE E f Transition frequency - 350 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 1.6 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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