2SCR542F3 Datasheet NPN 3.0A 30V Middle Power Transistor llOutline DFN2020-3S Parameter Value V 30V CEO I 3A C HUML2020L3 llFeatures llInner circuit 1) Suitable for Middle Power Driver. 2) Low V CE(sat) V =200mV(Max.). CE(sat) (I /I =1A/50mA) C B 3) High collector current. I =3A(max),I =6A(max) C CP 4) Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conductivity. llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) DFN2020-3S 2SCR542F3 2020 TR 180 8 3000 NQ (HUML2020L3) www.rohm.com 1/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. 2SCR542F3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 3 A C Collector current *1 I 6 A CP *2 P 1.0 W D Power dissipation *3 P 2.1 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV I = 100A Emitter-base breakdown voltage 6 - - V EBO E I Collector cut-off current V = 30V - - 100 nA CBO CB I Emitter cut-off current V = 4V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 1A, I = 50mA - 90 200 mV CE(sat) C B h V = 2V, I = 500mA DC current gain 200 - 500 - FE CE C V = 10V, I = -100mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = 10V, I = 0A, CB E Output capacitance C - 25 - pF ob f = 1MHz I = 2.5A, C t Turn-On time - 40 - ns on I = 250mA, B1 I = -250mA, B2 t Storage time - 320 - ns stg V 10V, CC R = 3.9 L t Fall time - 25 - ns f See test circuit *1 Pw=10ms Single Pulse 2 *2 Mounted on FR4 board(25.425.41.6mm, Cu PAD645mm ). *3 Pw=10ms 2 Mounted on FR4 board(25.425.41.6mm, Cu PAD645mm ). www.rohm.com 2/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.