X-On Electronics has gained recognition as a prominent supplier of 2SCR542PFRAT100 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR542PFRAT100 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SCR542PFRAT100 ROHM

2SCR542PFRAT100 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SCR542PFRAT100
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN SOT-89 5A 200 to 500hFE 30V
Datasheet: 2SCR542PFRAT100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6328 ea
Line Total: USD 0.63

Availability - 1647
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
71
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.534
10 : USD 0.4534
30 : USD 0.4087
100 : USD 0.3576
500 : USD 0.3352
1000 : USD 0.3253

1647
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.6328
10 : USD 0.5506
100 : USD 0.3876
500 : USD 0.3127
1000 : USD 0.2149

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the 2SCR542PFRAT100 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR542PFRAT100 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SCR542PFRA2SCR542P Data Sheet NPN 5.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value V 30V CEO Base I Collector 5.0A C Emitter 2SCR542PFRA2SCR542P lFeatures (SC-62) 1) Suitable for Middle Power Driver <SOT-89> 2) Complementary PNP Types : 2S2SAR542PFRAAR542P 3) Low V CE(sat) V =0.4V Max. (I /I =2A/100mA) CE(sat) C B 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver , LED driver Base Power supply Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2SCR542PFRA2SCR542P MPT3 4540 T100 180 12 1,000 NQ lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V 30 V Collector-base voltage CBO V 30 V Collector-emitter voltage CEO V 6 V Emitter-base voltage EBO I 5.0 A DC C Collector current *1 10 A Pulsed I CP *2 W 0.5 Power dissipation 2SCR542P P D *3 W 2.0 T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg *1 Pw=10ms , single pulse *2 Each terminal mounted on a reference land *3 Mounted on a ceramic board (40400.7mm) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.02 - Rev.C 1/6Data Sheet 2SCR542PFRA lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = 1mA 30 - - V CEO C breakdown voltage Collector-base BV I = 100mA 30 - - V CBO C breakdown voltage Emitter-base BV I = 100mA 6 - - V EBO E breakdown voltage I V = 30V Collector cut-off current - - 1 mA CBO CB I V = 4V Emitter cut-off current - - 1 mA EBO EB Collector-emitter *1 I = 2A, I = 100mA V - 0.20 0.40 V C B CE(sat) saturation voltage h V = 2V, I = 500mA DC current gain 200 - 500 - FE CE C V = 10V, I = -100mA CE E Transition frequency f - 250 - MHz T f=100MH Z V = 10V, I = 0A CB E Output capacitance C - 25 - pF ob f = 1MHz *2 Turn-on time - 40 - ns t on I =2.5A C I =250mA B1 *2 Storage time - 320 - ns t stg I = -250mA B2 V 10V CC *2 Fall time t - 25 - ns f *1 Pulsed *2 See switching time test circuit lSwitching time test circuit www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.02 - Rev.C 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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