X-On Electronics has gained recognition as a prominent supplier of 2SCR543DTL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR543DTL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SCR543DTL ROHM

2SCR543DTL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SCR543DTL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT Trans GP BJT NPN 50V 4A
Datasheet: 2SCR543DTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9717 ea
Line Total: USD 0.97

Availability - 358
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
358
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.9717
10 : USD 0.8073
100 : USD 0.6463
500 : USD 0.5647
1000 : USD 0.4911
2500 : USD 0.4473
10000 : USD 0.4324

2328
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 144
Multiples : 1
144 : USD 0.9914
250 : USD 0.9516
500 : USD 0.9173
1000 : USD 0.8874

931
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 144
Multiples : 1
144 : USD 0.9914
250 : USD 0.9516
500 : USD 0.9173

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SCR543DTL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR543DTL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SCR543D Datasheet NPN 4.0A 50V Middle Power Transistor lOutline Collector CPT3 Parameter Value V 50V CEO I Base 4.0A C Emitter 2SCR543D lFeatures (SC-63) 1) Suitable for Middle Power Driver <SOT-428> 2) Complementary PNP Types : 2SAR543D 3) Low V CE(sat) V =0.35V(Max.) CE(sat) (I /I =2A/100mA) C B 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver , LED driver Base Power supply Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2SCR543D CPT3 6595 TL 330 16 2,500 CR543 lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V 6 V Emitter-base voltage EBO I 4.0 A DC C Collector current *1 8.0 A Pulsed I CP *2 1 W P D Power dissipation *3 10 W P D T 150 C Junction temperature j T C Range of storage temperature -55 to +150 stg *1 Pw=10ms , single pulse *2 Mounted on a substrate *3 Tc=25C www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.B 1/6 Not Recommended for New DesignsData Sheet 2SCR543D lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = 1mA 50 - - V CEO C breakdown voltage Collector-base BV I = 100mA 50 - - V CBO C breakdown voltage Emitter-base BV I = 100mA 6 - - V EBO E breakdown voltage I V = 50V Collector cut-off current - - 1 mA CBO CB I V = 4V Emitter cut-off current - - 1 mA EBO EB Collector-emitter *1 I = 2A, I = 100mA V - 0.13 0.35 V C B CE(sat) saturation voltage h V = 3V, I = 100mA DC current gain 180 - 450 - FE CE C V = 10V, I = -500mA CE E Transition frequency f - 300 - MHz T f=100MH Z V = 10V, I = 0A, CB E Output capacitance C - 20 - pF ob f = 1MHz *2 Turn-on time - 50 - ns t on I =2A C I =200mA B1 *2 Storage time - 450 - ns t stg I = -200mA B2 V 10V CC *2 Fall time t - 85 - ns f *1 Pulsed *2 See switching time test circuit lSwitching time test circuit www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.05 - Rev.B 2/6 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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