X-On Electronics has gained recognition as a prominent supplier of 2SCR552P5T100 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR552P5T100 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SCR552P5T100 ROHM

Hot 2SCR552P5T100 electronic component of ROHM
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Part No.2SCR552P5T100
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 30V Vceo 3A Ic MPT3
Datasheet: 2SCR552P5T100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0395 ea
Line Total: USD 0.04 
Availability - 7
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0395

805
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.3423
50 : USD 0.2762
150 : USD 0.2478
1000 : USD 0.2126
2000 : USD 0.1968
5000 : USD 0.1874

2325
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4741
10 : USD 0.3619
100 : USD 0.2541
500 : USD 0.2013
1000 : USD 0.1738
2000 : USD 0.1661

1920
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 455
Multiples : 1
455 : USD 0.2241
500 : USD 0.2161
1000 : USD 0.209

1008
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 308
Multiples : 1
308 : USD 0.1319
500 : USD 0.1317
1000 : USD 0.1314

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SCR552P5T100 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR552P5T100 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SCR552P5 Datasheet Middle Power Transistors (30V / 3A) llOutline SOT-89 Parameter Value SC-62 V 30V CEO I 3A C MPT3 llFeatures llInner circuit 1)Low saturation voltage,typically V =400mV(Max.) CE(sat) (I /I =1A/50mA) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SCR552P5 4540 T100 180 12 1000 NF (MPT3) www.rohm.com 1/6 20150730 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.2SCR552P5 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 3 A C Collector current *1 I 6 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 30V - - 1.0 A CBO CB Emitter cut-off current I V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 1A, I = 50mA - 200 400 mV CE(sat) C B DC current gain h V = 2V, I = 500mA 200 - 500 - FE CE C V = 10V, I = -100mA, CE E *4 Transition frequency - 280 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 15 - pF ob f = 1MHz I = 1.5A, C t Turn-On time - 25 - ns on I = 150mA, B1 I = -150mA, B2 t Storage time - 300 - ns stg V 10V, CC R = 6.7 L Fall time t - 20 - ns f See test circuit *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20150730 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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