X-On Electronics has gained recognition as a prominent supplier of 2SCR586D3TL1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR586D3TL1 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SCR586D3TL1 ROHM

2SCR586D3TL1 electronic component of ROHM
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See Product Specifications
Part No.2SCR586D3TL1
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 80V 5A 10W Pwr trnstr Low VCE
Datasheet: 2SCR586D3TL1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7332 ea
Line Total: USD 0.73 
Availability - 1675
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1675
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7332
10 : USD 0.6068
30 : USD 0.5436
100 : USD 0.4823
500 : USD 0.3905
1000 : USD 0.3715

4273
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0318
10 : USD 0.8118
100 : USD 0.5797
500 : USD 0.4796
1000 : USD 0.4543
2500 : USD 0.4356
5000 : USD 0.4092
10000 : USD 0.4037

696
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.022
10 : USD 0.8792
34 : USD 0.5096
93 : USD 0.4816
2500 : USD 0.4676

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
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We are delighted to provide the 2SCR586D3TL1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR586D3TL1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Semiconductor 1. The 2SCR586D3TL1 is a NPN silicon epitaxial transistor from ROHM Semiconductor. It is designed for switching applications and is housed in a SOT-89 package. 2. This transistor has a maximum collector-emitter voltage of 60V and an gain (Hfe) of 250-400. It is capable of a maximum collector power dissipation of 0.3W with an operating temperature range of -55°C to 150°C. It has a recommended storage temperature range of -55°C to +150°C and a maximum collector current of 500mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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