X-On Electronics has gained recognition as a prominent supplier of 2SCR586D3TL1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCR586D3TL1 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SCR586D3TL1 ROHM

2SCR586D3TL1 electronic component of ROHM
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See Product Specifications
Part No.2SCR586D3TL1
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 80V 5A 10W Pwr trnstr Low VCE
Datasheet: 2SCR586D3TL1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7332 ea
Line Total: USD 0.73 
Availability - 1733
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1733
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7332
10 : USD 0.6068
30 : USD 0.5437
100 : USD 0.4824
500 : USD 0.3906
1000 : USD 0.3715

4288
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9326
10 : USD 0.7762
100 : USD 0.5693
500 : USD 0.4807
1000 : USD 0.4554
2500 : USD 0.4404
5000 : USD 0.422

696
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.854
10 : USD 0.7042
34 : USD 0.5222
93 : USD 0.4928
500 : USD 0.4746

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
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We are delighted to provide the 2SCR586D3TL1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCR586D3TL1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Semiconductor 1. The 2SCR586D3TL1 is a NPN silicon epitaxial transistor from ROHM Semiconductor. It is designed for switching applications and is housed in a SOT-89 package. 2. This transistor has a maximum collector-emitter voltage of 60V and an gain (Hfe) of 250-400. It is capable of a maximum collector power dissipation of 0.3W with an operating temperature range of -55°C to 150°C. It has a recommended storage temperature range of -55°C to +150°C and a maximum collector current of 500mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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