2SCR586J FRG NPN 5.0A 80V Power Transistor Datasheet llOutline TO-263AB Parameter Value V 80V CEO I 5A C LPTL llFeatures llInner circuit 1) Suitable for Power Driver. 2) Low V CE(sat) V =300mV(Max.). CE(sat) (I /I =2A/100mA) C B 3) AEC-Q101 Qualified llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Taping Reel size Tape width Part No. Package ordering Marking code (mm) (mm) unit.(pcs) LPTL 2SCR586J FRG TLL 330 24 1000 CR586 (TO-263AB) www.rohm.com 1/6 20180702 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2SCR586J FRG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 80 V CBO V Collector-emitter voltage 80 V CEO V Emitter-base voltage 6 V EBO I 5 A C Collector current *1 I 10 A CP *2 P Power dissipation 40 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = 100A 80 - - V CBO C Collector-emitter breakdown BV I = 1mA 80 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 80V - - 1 A CBO CB Emitter cut-off current I V = 4V - - 1 A EBO EB Collector-emitter saturation voltage V I = 2A, I = 100mA - 100 300 mV CE(sat) C B *3 V = 3V, I = 500mA DC current gain 120 - 390 - h CE C FE V = 10V, I = -500mA, CE E *3 Transition frequency - 200 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 50 - pF ob f = 1MHz t Turn-On time I = 2.5A, - 45 - ns on C I = 250mA, B1 I = -250mA, B2 t Storage time - 700 - ns stg V 10V, CC R = 3.9 L t Fall time - 180 - ns f See test circuit *1 Pw=10ms Single Pulse *2 Tc=25 *3 Pulsed www.rohm.com 2/6 20180702 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.