X-On Electronics has gained recognition as a prominent supplier of 2SCRC41CHZGT116R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SCRC41CHZGT116R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SCRC41CHZGT116R ROHM

2SCRC41CHZGT116R electronic component of ROHM
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See Product Specifications
Part No.2SCRC41CHZGT116R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT HV AMP TRANSISTOR 120V 50MA
Datasheet: 2SCRC41CHZGT116R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5972 ea
Line Total: USD 0.6

Availability - 1825
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1825
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4956
10 : USD 0.4094
100 : USD 0.2794
1000 : USD 0.1679
3000 : USD 0.1552
9000 : USD 0.1392
24000 : USD 0.1334
45000 : USD 0.1323
99000 : USD 0.1277

   
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RoHS - XON
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We are delighted to provide the 2SCRC41CHZGT116R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SCRC41CHZGT116R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SCRC41C HZG Datasheet High-voltage Amplifier Transistor (120V, 50mA) AEC-Q101 Qualified llOutline SOT-23 Parameter Value V 120V CEO I 50mA C SST3 llFeatures llInner circuit 1)High breakdown voltage. (BV =120V) CEO 2)Complements the 2SARA41C HZG llApplication HIGH-VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 2SCRC41C HZG 2924 T106 180 8 3000 K2 (SST3) www.rohm.com 1/6 20181106 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2SCRC41C HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 120 V CBO V Collector-emitter voltage 120 V CEO V Emitter-base voltage 5 V EBO I Collector current 50 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 120 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 100V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 500 mV CE(sat) C B DC current gain h V = 6V, I = 2mA 180 - 390 - FE CE C V = 12V, I = -2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.5 - pF ob f = 1MHz hFE values are calssified as follows : rank R S - - - h 180-390 270-560 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2018 ROHM Co., Ltd. All rights reserved. 20181106 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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