Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 Features Dimensions (Unit : mm) 1) Low VCE(sat) = 0.15V(Typ.) 2SD1664 2SD1858 + (lC / lB = 500mA / 50mA) 2.5 0.2 + 6.8 0.2 +0.2 4.5 2) Compliments 2SB1132 / 2SB1237 0.1 +0.2 1.5 1.6 0.1+ 0.1 Structure Epitaxial planar type 0.65Max. (1) (2) (3) +0.1 NPN silicon transistor 0.4 0.05 0.4 0.1+ 0.5 0.1+ + 0.4 0.1 + 0.5 0.1 + 1.5 0.1+ 1.5 0.1 3.0 0.2+ (1) (2) (3) 2.54 2.54 + 1.05 0.45 0.1 Abbreviated symbol: DA (1) Base (1) Emitter (2) Collector (2) Collector ROHM : MPT3 (3) Emitter (3) Base ROHM : ATV EIAJ : SC-62 Denotes hFE Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5V 1 A (DC) Collector current IC 2 A (Pulse) 1 0.5 2SD1664 Collector 2 W PC 2 power dissipation 2SD1858 1 3 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Pw=20ms, duty=1/2 2 When mounted on a 40 40 0.7 mm ceramic board. 3 When it is mounted on the copper clad PCB (1.7mm thick) with land size for collector 1 square CM or larger. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 40 VIC=50A Collector-emitter breakdown voltage BVCEO 32 V IC=1mA Emitter-base breakdown voltage BVEBO 5 V IE=50A ICBO 0.5 A VCB=20V Collector cutoff current Emitter cutoff current IEBO 0.5 A VEB=4V DC current transfer ratio hFE 120 390 VCE=3V, IC=100mA Collector-emitter saturation voltage VCE(sat) 0.15 0.4 V IC/IB=500mA / 50mA Transition frequency fT 150 MHz VCE=5V, IE= 50mA, f=100MHz Output capacitance Cob 15 pF VCB=10V, IE=0A, f=1MHz www.rohm.com 2009.12 - Rev.A 1/3 c 2009 ROHM Co., Ltd. All rights reserved. + + + 4.0 0.3 +0.2 2.5 + + 1.0 0.2 0.1 0.5 0.1 1.0 0.9 + + 4.4 0.2 14.5 0.5 PW =10ms 100ms 2SD1664 / 2SD1858 Data Sheet Packaging specifications and hFE Package Taping Code T100 TV2 Basic ordering 1000 2500 Type hFE unit (pieces) 2SD1664 QR 2SD1858 QR hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Electrical characteristics curves 500 2000 500 Ta=25C VCE=6V Ta=25C 2.5mA 2.0mA 3.0mA 200 1000 400 Ta=100C 3.5mA 100 4.0mA 4.5mA 1.5mA 500 50 300 25C 1.0mA 20 55C 200 200 VCE=3V 10 1V 5 0.5mA 100 100 2 50 IB=0A 0 1 1 2 5 10 20 50 100 200 500 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE(V) BASE TO EMITTER VOLTAGE : VBE(V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs. collector characteristics characteristics current ( ) 2000 0.5 VCE=3V Ta=25C lC/lB = 10 0.5 1000 0.2 0.2 500 0.1 IC/IB =50 0.1 200 0.05 Ta=100C 0.05 Ta =100C 20 25C 25C 100 55C 10 40C 0.02 0.02 50 0.01 1 2 5 10 20 50 100 200 500 1000 0.01 1 2 5 10 20 50 100 200 5001000 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. Fig.5 Collector-emitter saturation Fig.6 Collector-emitter saturation collector current () voltage vs. collector current ( ) voltage vs. collector current () 100 5 Ta=25C Ta = 25C VCE=5V IC Max. (Pulse) f = 1MHz 2 IE = 0A 200 50 DC 1 0.5 100 0.2 20 0.1 50 0.05 Ta = 25C 10 Single nonrepetitive 0.02 pulse 20 0.01 5 -1 -2 -5 -10 -20 -50 -100 0.5 12 5 10 20 0.1 0.2 0.5 1 2 5 10 20 50 EMITTER CURRENT : IE(mA) COLLECTOR TO BASE VOLTAGE : VCB(V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Gain bandwidth product vs. Fig.8 Collector output capacitance Fig.9 Safe operating area emitter current vs. collector-base voltage (2SD1664) www.rohm.com 2009.12 - Rev.A 2/3 c 2009 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A)