X-On Electronics has gained recognition as a prominent supplier of 2SD1733TLP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1733TLP Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD1733TLP ROHM

2SD1733TLP electronic component of ROHM
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See Product Specifications
Part No.2SD1733TLP
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT DVR NPN 80V 1A
Datasheet: 2SD1733TLP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.363 ea
Line Total: USD 907.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0149

0
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.363
5000 : USD 0.3465
10000 : USD 0.3333

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD1733TLP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1733TLP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SD1733 Datasheet Power Transistor(80V,1A) llOutline Parameter Value CPT V 80V CEO I 1A C TO-252 SC-63 llFeatures 1)High V ,VCEO=80V llInner circuit CEO 2)High I ,I =1A(DC) C C 3)Good hFE linearity 4)Low V CE(sat) 5)Complements the 2SB1181 llApplication Low frequency power amplifier llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD1733 CPT 6595 TL 330 16 2500 D1733 www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SD1733 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 80 V CEO V Emitter-base voltage 5 V EBO I Collector current 1 A C *1 P 1 W D Power dissipation *2 P 10 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 80 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 100V - - 1.0 A CBO CB I Emitter cut-off current V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 500mA, I = 20mA - - 400 mV CE(sat) C B h V = 3V, I = 500mA DC current gain 82 - 390 - FE CE C V = 10V, I = -50mA, CE E f Transition frequency - 100 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 20 - pF ob f = 1MHz hFE values are calssified as follows : rank P Q R - - h 82-180 120-270 180-390 - - FE *1 Ta=25 *2 Tc=25 www.rohm.com 2/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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