2SD1757K Datasheet Power Transistor (15V, 500mA) llOutline Parameter Value SMT3 V 15V CEO I 500mA C SOT-346 SC-59 llFeatures 1)Low V . (Typ.8mV at I /I =10/1mA) llInner circuit CE(sat) C B 2)Optimal for muting. llApplication MUTING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD1757K SMT3 2928 T146 180 8 3000 AA www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SD1757K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 15 V CEO V Emitter-base voltage 6.5 V EBO I Collector current 500 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 15 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 6.5 - - V EBO E Collector cut-off current I V = 20V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 50mA - 100 400 mV CE(sat) C B DC current gain h V = 3V, I = 100mA 120 - 560 - FE CE C V = 5V, I = -50mA, CE E f Transition frequency - 150 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 15 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R S - - h 120-270 180-390 270-560 - - FE *1 Each terminal mounted on a fererence land. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.001