X-On Electronics has gained recognition as a prominent supplier of 2SD1757KT146Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1757KT146Q Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD1757KT146Q ROHM

Hot 2SD1757KT146Q electronic component of ROHM
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Part No.2SD1757KT146Q
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 15 V 500 mA 150MHz 200 mW Surface Mount SMT3
Datasheet: 2SD1757KT146Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
705: USD 0.1395 ea
Line Total: USD 98.35 
Availability - 1852
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ: 705  Multiples: 1
Pack Size: 1

 2SD1757KT146Q More Buying Options & Price Grid(s)

Availability Price Quantity
3315
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6226
10 : USD 0.4048
100 : USD 0.2706
500 : USD 0.2178
1000 : USD 0.2013
3000 : USD 0.1892
9000 : USD 0.176

1852
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 705
Multiples : 1
705 : USD 0.1395
1000 : USD 0.1349

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD1757KT146Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1757KT146Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD1757K Datasheet Power Transistor (15V, 500mA) llOutline Parameter Value SMT3 V 15V CEO I 500mA C SOT-346 SC-59 llFeatures 1)Low V . (Typ.8mV at I /I =10/1mA) llInner circuit CE(sat) C B 2)Optimal for muting. llApplication MUTING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD1757K SMT3 2928 T146 180 8 3000 AA www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SD1757K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 15 V CEO V Emitter-base voltage 6.5 V EBO I Collector current 500 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 15 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 6.5 - - V EBO E Collector cut-off current I V = 20V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 50mA - 100 400 mV CE(sat) C B DC current gain h V = 3V, I = 100mA 120 - 560 - FE CE C V = 5V, I = -50mA, CE E f Transition frequency - 150 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 15 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R S - - h 120-270 180-390 270-560 - - FE *1 Each terminal mounted on a fererence land. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.001

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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