Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units : mm) 1) Low VCE(sat). 2SD1758 2SD1862 VCE(sat) = 0.5V (Typ.) +0.2 2.50.2 6.80.2 2.3 6.50.2 0.1 (IC/IB = 2A / 0.2A) C0.5 +0.2 5.1 0.1 0.50.1 2) Complements the 2SB1182 / 2SB1240 0.650.1 0.75 0.65Max. Structure 0.9 0.550.1 Epitaxial planar type NPN silicon transistor 2.30.2 2.30.2 0.50.1 1.00.2 (1) (2) (3) (1) (2) (3) 2.54 2.54 1.05 0.450.1 ROHM : CPT3 (1) Base (1) Emitter ROHM : ATV EIAJ : SC-63 (2) Collector (2) Collector (3) Emitter (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5V 2 A (DC) Collector current IC 2.5 A (Pulse) 1 Collector 2SD1758 10 W (TC=25C) power PC 2 dissipation 2SD1862 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse, PW=20ms 2 2 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm or lager. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 40 VIC=50A Collector-emitter breakdown voltage BVCEO 32 V IC=1mA Emitter-base breakdown voltage BVEBO 5 V IE=50A Collector cutoff current ICBO 1 A VCB=20V Emitter cutoff current IEBO 1 A VEB=4V DC current transfer ratio hFE 120 390 VCE=3V, IC=0.5A Collector-emitter saturation voltage VCE(sat) 0.5 0.8 V IC/IB=2A/0.2A Transition frequency fT 100 MHz VCE=5V, IE=50mA, f=100MHz Output capacitance Cob 30 pF VCB=10V, IE=0A, f=1MHz Measured using pulse current. www.rohm.com 2010.04 - Rev.C 1/2 c 2010 ROHM Co., Ltd. All rights reserved. +0.3 5.5 0.1 1.50.3 0.9 1.5 2.5 9.50.5 1.0 0.9 4.40.2 14.50.5DC PW=100ms PW=10ms 2SD1758 / 2SD1862 Data Sheet Packaging specifications and hFE Package Taping Code TL TV2 Basic ordering Type 2500 2500 hFE unit (pieces) 2SD1758 QR 2SD1862 QR hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Electrical characteristic curves 0.5 Ta=25C Ta=25C 2000 Ta=25C 2.7mA VCE=3V 500 1000 3.0mA 2.4mA 0.4 500 2.1mA 200 1.8mA 200 0.3 100 1.5mA VCE=3V 50 1.2mA 1V 100 0.2 20 0.9mA 10 50 0.6mA 0.1 5 0.3mA 2 IB=0A 1 0 20 020.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 .0 0 0.4 0.8 1.2 1.6 2.0 5 10 20 50 100 200 500 1A 2A COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs. collector characteristics characteristics current 2 1000 Ta=25C Ta=25C Ta=25C VCE=5V 500 500 1 IC/IB=10 200 200 0.5 100 100 IC/IB=50 0.2 50 50 20 0.1 10 20 20 5 10 20 50 100 200 500 1A 2A 1 -2 5 10 20 50 100200 500 1A 5 10 20 50 100 200 500 1A 2A COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation Fig.6 Transition frequency vs. emitter Fig.4 Collector-emitter saturation voltage vs. collector current current voltage vs. collector current 1000 5 3 Ta=25C 2 f=1MHz Ic Max 2 500 IE=0A Ic Max Pulse 1 IC=0A 1 Cib PW=100ms 0.5 200 0.5 100 0.2 0.2 Cob 0.1 50 0.1 0.05 TC=25C 0.05 Ta=25C Single 20 Single 0.02 nonrepetitive nonrepetitive pulse pulse 0.01 10 0.1 0.2 0.5 1 2 5 10 20 50 0.5 12 5 10 20 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Safe operating area Fig.7 Collector output capacitance vs. Fig.9 Safe operating area (2SD1758) collector-base voltage (2SD1862) Emitter input capacitance vs. emitter-base voltage www.rohm.com 2010.04 - Rev.C 2/2 c 2010 ROHM Co., Ltd. All rights reserved. COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (mA) EMITTER INPUT CAPACITANCE : Cib (pF) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE