2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 z External dimensions (Unit : mm) z Features 1) High breakdown voltage, BVCEO=80V, and 2SD1767 high current, IC=0.7A. 4.0 1.0 2.5 0.5 2) Complements the 2SB1189 / 2SB1238. (1) ( ) 2 z Absolute maximum ratings (Ta=25C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V IC 0.7 A(DC) Collector current ROHM : MPT3 (1) Base ICP 1 A(Pulse) 1 (2) Collector EIAJ : SC-62 0.5 Collector power 2SD1767 (3) Emitter PC 2 W 2 dissipation 2SD1859 1 3 Junction temperature Tj 150 C 2SD1859 Storage temperature Tstg 55 to +150 C 1 Pw=10ms, duty=1/2 2.5 6.8 2 When mounted on a 40400.7 mm ceramic board. 2 3 Printed circuit board 1.7 mm thick, collector plating 1cm or larger. 0.65Max. z Packaging specifications and hFE 0.5 Type 2SD1767 2SD1859 Package (1) (2) (3) MPT3 ATV hFE PQR QR 2.54 2.54 1.05 0.45 Marking DC Code T100 TV2 Taping specifications Basic ordering unit (pieces) 1000 2500 Denotes hFE (1) Emitter ROHM : ATV (2) Collector (3) Base z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 80 V IC=50A Collector-emitter breakdown voltage BVCEO 80 V IC=2mA Emitter-base breakdown voltage BVEBO 5 V IE=50A Collector cutoff current ICBO 0.5 A VCB=50V Emitter cutoff current IEBO VEB=4V 0.5 A Collector-emitter saturation voltage VCE(sat) 0.2 0.4 V IC/IB=500mA/50mA DC current transfer ratio hFE 120 390 VCE/IC=3V/0.1A Transition frequency fT 120 MHz VCE=10V, IE=50mA, f=100MHz Output capacitance Cob 10 pF VCB=10V, IE=0A, f=1MHz Rev.A 1/2 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.0 0.9 4.4 14.5 1.6 1.5 4.5 PW =10ms PW =100ms DC DC PW =100ms PW =10ms 2SD1767 / 2SD1859 Transistors z Electrical characteristics curves 1000 50 Ta=25C Ta=25C Ta=25C 1.0 VCE=6V 10mA 20 500 9mA 5mA 8mA 10 0.8 4mA 5 3mA 200 0.6 2 2mA VCE=5V 100 1 0.4 3V 0.5 1V 1mA 0.2 50 0.2 IB=0A 0 0.1 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 12 5 1020 50 100 200 500 5000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagetion characteristics Fig.3 DC current gain vs. collector current 1000 Ta=25C Ta=25C Ta=25C VCE=5V f=1MHz 500 IC=0A 0.2 100 50 0.1 200 IC/IB=20 0.05 10 100 20 50 0.02 10 20 5 0.01 10 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-emitter saturation voltage Fig.5 Resistance raito vs. emitter current Fig.6 Collector output capacitance vs. collector current vs. collector-base voltage 10 Ta=25C 2 5 f=1MHz IC=0A 2 100 IC Max Pulse IC Max (Pulse) 1 1 IC Max 500m 50 0.5 200m 100m 0.2 50m 20 20m 0.1 10m Tc=25C Tc=25C 10 Single Single 5m 0.05 nonrepetitive nonrepetitive 2m 5 pulse pulse 1m 0.02 0.5 1 2 5 10 20 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Emitter input capacitance Fig.8 Safe operating area (2SD1859) Fig.9 Safe operating area (2SD1767) vs. emitter-base voltage Rev.A 2/2 7mA 6mA COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)