2SD1781K Medium Power Transistor (32V, 800mA) Datasheet llOutline Parameter Value SMT3 V 32V CEO I 800mA C 2SD1781K SOT-346 llFeatures 1)Very low V . llInner circuit CE(sat) V =0.1V(Typ.) CE(sat) (I /I =500mA/50mA) C B 2)Higt current capacity in compact package. 3)Complements the 2SB1197K. llApplication POWER AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD1781K SMT3 2928 T146 180 8 3000 AF www.rohm.com 1/6 20150403 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SD1781K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 40 V CBO V Collector-emitter voltage 32 V CEO V Emitter-base voltage 5 V EBO I 800 mA C Collector current *1 I 1.5 A CP *2 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 40 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 32 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 5 - - V EBO E Collector cut-off current I V = 20V - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 50mA - 100 400 mV CE(sat) C B DC current gain h V = 3V, I = 100mA 120 - 390 - FE CE C V = 5V, I = -50mA, CE E f Transition frequency - 150 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 15 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Pw=100ms Single pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20150403 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.