2SD1782K Power Transistor (80V, 500mA) Datasheet llOutline SOT-346 Parameter Value SC-59 V 80V CEO I 500mA C SMT3 llFeatures llInner circuit 1)Low V CE(sat) V =0.2V(Typ.) CE(sat) (I /I =500mA/50mA) C B 2)High breakdown voltage. BV =80V CEO 3)Complements the 2SB1198K llApplication DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SD1782K 2928 T146 180 8 3000 AJ (SMT3) www.rohm.com 1/6 20160909 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. 2SD1782K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 80 V CBO V Collector-emitter voltage 80 V CEO V Emitter-base voltage 5 V EBO I Collector current 500 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 80 - - V CBO C voltage Collector-emitter breakdown BV I = 2mA 80 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 50V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 50mA - 200 500 mV CE(sat) C B DC current gain h V = 3V, I = 100mA 120 - 390 - FE CE C V = 10V, I = -50mA, CE E f Transition frequency - 120 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7.5 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Each terminal mounted on a reference land www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20160909 - Rev.003