X-On Electronics has gained recognition as a prominent supplier of 2SD1949T106Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD1949T106Q Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD1949T106Q ROHM

2SD1949T106Q electronic component of ROHM
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See Product Specifications
Part No.2SD1949T106Q
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 50 V 500 mA 250MHz 200 mW Surface Mount UMT3
Datasheet: 2SD1949T106Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0925 ea
Line Total: USD 0.46 
Availability - 652
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ: 5  Multiples: 5
Pack Size: 5

 2SD1949T106Q More Buying Options & Price Grid(s)

Availability Price Quantity
652
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0925
50 : USD 0.0803
150 : USD 0.0752
500 : USD 0.0686
3000 : USD 0.0658
6000 : USD 0.064

755
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4367
10 : USD 0.2926
100 : USD 0.1452
1000 : USD 0.1265
3000 : USD 0.1056
9000 : USD 0.0924
24000 : USD 0.0924
45000 : USD 0.088
99000 : USD 0.0869

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD1949T106Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD1949T106Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD1949 / 2SD1484K Datasheet Middle Power Transistor (50V, 500mA) llOutline Parameter Value SOT-323 SOT-346 V 50V CEO I 500mA C 2SD1949 2SD1484K (UMT3) (SMT3) llFeatures llInner circuit 1)High current. (I =0.5A) C 2)Low V CE(sat) V 400mV CE(sat) at I =150mA/I =15mA C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width hFE Part No. Package ordering Marking size code (mm) (mm) rank unit.(pcs) SOT-323 2SD1949 2021 T106 180 8 3000 QR Y (UMT3) SOT-346 2SD1484K 2928 T146 180 8 3000 QR Y (SMT3) www.rohm.com 1/7 20160824 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. 2SD1949 / 2SD1484K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 500 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 100A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 30V - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 150mA, I = 15mA - - 400 mV CE(sat) C B h V = 3V, I = 10mA DC current gain 120 - 390 - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 6.5 - pF ob f = 1MHz hFE values are calssified as follows : rank Q R - - - h 120-270 180-390 - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/7 20160824 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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