2SD2444K Datasheet Power Transistor (15V,1A) llOutline Parameter Value SMT3 V 15V CEO I 1A C SOT-346 SC-59 llFeatures 1)Low saturation voltage, llInner circuit V =0.3V(Max.) at I /I =400mA/20mA CE(sat) C B 2)I =1A. C 3)Complements the 2SB1590K. llApplication LOW FREQUENCY POWER AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD2444K SMT3 2928 T146 180 8 3000 BS www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SD2444K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 15 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 I 2 A CP *2 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 15 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 6 - - V EBO E Collector cut-off current I V = 12V - - 500 nA CBO CB Emitter cut-off current I V = 5V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 400mA, I = 20mA - - 300 mV CE(sat) C B h 1 V = 2V, I = 50mA 180 - 390 FE CE C DC current gain - h 2 V = 2V, I = 800mA 80 - - FE CE C V = 2V, I = -50mA, CE E Transition frequency f - 200 - MHz T f = 100MHz V = 10V, I = 0A, CB E Output capacitance C - 15 - pF ob f = 1MHz hFE values are calssified as follows : rank R - - - - h 1 180-390 - - - - FE *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.