2SD2537T100V ROHM

2SD2537 Middle Power Transistor (25V / 1.2A) Datasheet llOutline SOT-89 Parameter Value SC-62 V 25V CEO I 1.2A C MPT3 llFeatures llInner circuit 1)Low saturation voltage, Max. V =300mV at I /I =500mA/10mA. CE(sat) C B 2)High emitter-base voltage. (V =12V) EBO 3)P =2W (Mounted on a ceramic board D (40400.7mm) ). llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SD2537 4540 T100 180 12 1000 DV (MPT3) www.rohm.com 1/6 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2537 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 25 V CEO V Emitter-base voltage 12 V EBO I 1.2 A C Collector current *1 I 2 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 25 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 12 - - V EBO E I V = 30V Collector cut-off current - - 300 nA CBO CB I V = 12V Emitter cut-off current - - 300 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 10mA - - 300 mV CE(sat) C B Base-emitter saturation voltage V I = 500mA, I = 10mA - - 1.2 V BE(sat) C B h DC current gain V = 5V, I = 500mA 820 - 1800 - FE CE C V = 10V, I = -50mA, CE E *4 Transition frequency - 200 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 20 - pF ob f = 1MHz hFE values are calssified as follows : rank V - - - - hFE 820-1800 - - - - *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20151118 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.