X-On Electronics has gained recognition as a prominent supplier of 2SD2652T106 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2652T106 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2652T106 ROHM

2SD2652T106 electronic component of ROHM
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See Product Specifications
Part No.2SD2652T106
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 12 V 1.5 A 400MHz 200 mW Surface Mount UMT3
Datasheet: 2SD2652T106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2882 ea
Line Total: USD 0.29 
Availability - 5603
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 2SD2652T106 More Buying Options & Price Grid(s)

Availability Price Quantity
5603
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2882
100 : USD 0.2365
500 : USD 0.187
1000 : USD 0.1727
3000 : USD 0.1507
9000 : USD 0.1507
24000 : USD 0.1452
45000 : USD 0.1441

12813
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 77
Multiples : 1
77 : USD 0.533
100 : USD 0.4583
200 : USD 0.4193
500 : USD 0.2974
1000 : USD 0.2812
2000 : USD 0.2633
6000 : USD 0.247
12000 : USD 0.2325

2910
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 232
Multiples : 1
232 : USD 0.4585
250 : USD 0.4402
500 : USD 0.4243
1000 : USD 0.4104
2500 : USD 0.3983

561
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 232
Multiples : 1
232 : USD 0.4585
250 : USD 0.4402
500 : USD 0.4243

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD2652T106 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2652T106 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD2652 Datasheet General purpose amplification (12V, 1.5A) llOutline Parameter Value UMT3 V 12V CEO I 1.5A C SOT-323 SC-70 llFeatures 1 A collector current is large llInner circuit 2)Collector saturation voltage is low. V 200mV CE(sat) at I =500mA /I =25mA C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD2652 UMT3 2021 T106 180 8 3000 EW www.rohm.com 1/6 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. 2SD2652 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 12 V CEO V Emitter-base voltage 6 V EBO I 1.5 A C Collector current *1 I 3 A CP *2 P Power dissipation 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E I Collector cut-off current V = 15V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 80 200 mV CE(sat) C B *3 DC current gain V = 2V, I = 200mA 270 - 680 - h FE CE C V = 2V, I = -200mA, CE E *3 Transition frequency - 400 - MHz f T f = 100MHz V = 10V, I = 0mA, CB E C Output capacitance - 12 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.001

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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RHM
ROHM Semicon
ROHM Semiconductor

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