X-On Electronics has gained recognition as a prominent supplier of 2SD2656FRAT106 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2656FRAT106 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2656FRAT106 ROHM

2SD2656FRAT106 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SD2656FRAT106
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN SOT-323 1A 270 to 680hFE 30V
Datasheet: 2SD2656FRAT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0882 ea
Line Total: USD 264.6 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 30 Aug to Thu. 05 Sep
MOQ : 5
Multiples : 1
5 : USD 0.1981
10 : USD 0.1686
100 : USD 0.1677

0
Ship by Thu. 05 Sep to Mon. 09 Sep
MOQ : 3000
Multiples : 3000
3000 : USD 0.091
9000 : USD 0.081
24000 : USD 0.076
45000 : USD 0.071
99000 : USD 0.0697

0
Ship by Fri. 30 Aug to Thu. 05 Sep
MOQ : 5
Multiples : 5
5 : USD 0.2278
25 : USD 0.1587
100 : USD 0.1426
160 : USD 0.1073
435 : USD 0.1014

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the 2SD2656FRAT106 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2656FRAT106 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SD2656 2SD2656FRA Datasheet NPN 1A 30V Low Frequency Amplifier Transistors AEC-Q101 Qualified lOutline UMT3 Parameter Value Collector V 30V CEO Base I 1A C Emitter 2SD2656FRA 2SD2656 SOT-323 (SC-70) lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low. V is Max. 350mV CE(sat) At I =500mA, I =25mA C B 3) Complementary PNP Types : 2SB1694FRA 2SB1694 4) Lead Free/RoHS Compliant. lInner circuit lApplications Collector Driver circuit Base Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2S2SD2656FRAD2656 UMT3 2021 T106 180 8 3,000 EU www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 1/6Data Sheet 2SD2656FRA lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V 30 V Collector-base voltage CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 2 A I CP *2 Power dissipation 200 mW P D T Junction temperature 150 C j T C Range of storage temperature -55 to +150 stg lElectrical characteristics (Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = 1mA 30 - - V CEO C breakdown voltage Collector-base BV I = 10mA 30 - - V CBO C breakdown voltage Emitter-base BV I = 10mA 6 - - V EBO E breakdown voltage Collector cut-off current I V = 30V - - 100 nA CBO CB Emitter cut-off current I V = 6V - - 100 nA EBO EB Collector-emitter V I = 500mA, I = 25mA - 140 350 mV CE(sat) C B saturation voltage *3 h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA CE E f Transition frequency - 400 - MHz T *3 f=100MH Z V = 10V, I = 0mA CB E C Output capacitance - 5 - pF ob f = 1MHz *1 P =1ms Single pulse. W *2 Each terminal mounted on a reference footprint *3 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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