X-On Electronics has gained recognition as a prominent supplier of 2SD2656FRAT106 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2656FRAT106 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2656FRAT106 ROHM

Name: 2SD2656FRAT106
Brand: ROHM
SKU: 2SD2656FRAT106_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

2SD2656FRAT106 electronic component of ROHM

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Part No.	2SD2656FRAT106
Manufacturer:	ROHM
Category:	Bipolar Transistors - BJT
Description:	Bipolar Transistors - BJT NPN SOT-323 1A 270 to 680hFE 30V
Datasheet:	2SD2656FRAT106 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.0728 ea
Line Total: USD 218.4

Availability - 0

MOQ: 3000 Multiples: 3000
Pack Size: 3000

2SD2656FRAT106 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 22 Nov to Thu. 28 Nov MOQ : 5 Multiples : 1	5 : USD 0.192 10 : USD 0.1625 100 : USD 0.1557 500 : USD 0.1557

0 Ship by Wed. 20 Nov to Fri. 22 Nov MOQ : 3000 Multiples : 3000	3000 : USD 0.0728 9000 : USD 0.067 24000 : USD 0.067 45000 : USD 0.0635

0 Ship by Wed. 20 Nov to Fri. 22 Nov MOQ : 5 Multiples : 5	5 : USD 0.2208 25 : USD 0.1538 100 : USD 0.1382 160 : USD 0.104 435 : USD 0.0983

We are delighted to provide the 2SD2656FRAT106 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2656FRAT106 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD2656 2SD2656FRA Datasheet NPN 1A 30V Low Frequency Amplifier Transistors AEC-Q101 Qualified lOutline UMT3 Parameter Value Collector V 30V CEO Base I 1A C Emitter 2SD2656FRA 2SD2656 SOT-323 (SC-70) lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low. V is Max. 350mV CE(sat) At I =500mA, I =25mA C B 3) Complementary PNP Types : 2SB1694FRA 2SB1694 4) Lead Free/RoHS Compliant. lInner circuit lApplications Collector Driver circuit Base Emitter lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) 2S2SD2656FRAD2656 UMT3 2021 T106 180 8 3,000 EU www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 1/6Data Sheet 2SD2656FRA lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V 30 V Collector-base voltage CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 2 A I CP *2 Power dissipation 200 mW P D T Junction temperature 150 C j T C Range of storage temperature -55 to +150 stg lElectrical characteristics (Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter BV I = 1mA 30 - - V CEO C breakdown voltage Collector-base BV I = 10mA 30 - - V CBO C breakdown voltage Emitter-base BV I = 10mA 6 - - V EBO E breakdown voltage Collector cut-off current I V = 30V - - 100 nA CBO CB Emitter cut-off current I V = 6V - - 100 nA EBO EB Collector-emitter V I = 500mA, I = 25mA - 140 350 mV CE(sat) C B saturation voltage *3 h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA CE E f Transition frequency - 400 - MHz T *3 f=100MH Z V = 10V, I = 0mA CB E C Output capacitance - 5 - pF ob f = 1MHz *1 P =1ms Single pulse. W *2 Each terminal mounted on a reference footprint *3 Pulsed www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.B 2/6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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ROHM Semicon
ROHM Semiconductor

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Manufacturer ROHM ROHM
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 323 - 3 SOT - 323 - 3
Transistor Polarity Npn Npn
Configuration Single Single
Maximum DC Collector Current 1 A 1 A
Collector- Emitter Voltage VCEO Max 30 V 30 V
Collector- Base Voltage VCBO 30 V 30 V
Emitter- Base Voltage VEBO 6 V 6 V
Collector-Emitter Saturation Voltage 140 mV 140 mV
Pd - Power Dissipation 200 mW 200 mW
Gain Bandwidth Product fT 400 Mhz 400 Mhz
Maximum Operating Temperature + 150 C + 150 C
Qualification Aec - Q101 Aec - Q101
Packaging Cut Tape Cut Tape
Collector Emitter Voltage Vbrceo 30 V 30 V
Transition Frequency Ft 400 MHz 400 MHz
Power Dissipation Pd 200 mW 200 mW
Dc Collector Current 1 A 1 A
Dc Current Gain Hfe 270 270
Transistor Case Style Sot - 323 Sot - 323
No Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Msl Msl 1 - Unlimited Msl 1 - Unlimited
Dc Current Gain Hfe Max 680 680
Brand Rohm Rohm
Continuous Collector Current 1 A 1 A
Cnhts 8541210000 8541210000
Dc Collector/Base Gain Hfe Min 270 270
Hts Code 8541100050 8541100050
Mxhts 85411001 85411001
Product Type Bjts - Bipolar Transistors Bjts - Bipolar Transistors
Factory Pack Quantity : 3000 3000
Subcategory Transistors Transistors