2SD2657KT146 ROHM

2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units : mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 350mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions Abbreviated symbol : FZ ROHM : SMT3 (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector Absolute maximum ratings (Ta=25C) Packaging specifications Parameter Symbol Limits Unit Package Taping Collector-base voltage VCBO 30 V Code T146 VCEO 30 V Collector-emitter voltage Basic ordering unit (pieces) 3000 Type VEBO 6 V Emitter-base voltage IC 1.5 A 2SD2657K Collector current ICP 3 A PC 200 mW Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg 55~+150 C Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 30 V IC=10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO 30 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=10A ICBO 100 nA VCB=30V Collector cutoff current Emitter cutoff current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 160 350 mV IC=1A, IB=50mA DC current gain hFE 270 680 VCE=2V, IC=100mA fT 330 MHz VCE=2V, IE=100mA, f=100MHz Transition frequency VCB=10V, IE=0A, f=1MHz Corrector output capacitance Cob 11 pF Pulsed 1/2 0.4 0.15 ( ) 3 0~0.1 ( ) (2) 1 0.8 0.95 0.95 1.9 1.1 2.910ms 1ms DC Operation PW=100ms 2SD2657K Transistors Electrical characteristic curves 1000 10 1 VCE=2V Ta=25C IICC/I/IBB==2020/1 Pulsed Pulsed PulsedPulsed Ta=100C Ta=40C Ta=25C Ta=25C VBE(sat) Ta=100C Ta=40C 1 100 0.1 0.1 IC/IB=50/1 Ta=100C VCE(sat) Ta=25C IC/IB=20/1 Ta=40C IC/IB=10/1 10 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain Fig.3 Collector-emitter saturation voltage Fig.2 Collector-emitter saturation voltage vs. collector current vs. collector current base-emitter saturation voltage vs. collector current 1 1000 1000 Ta=25C VCE=2V Ta=25C VCE=5V Pulsed VCE=2V f=100MHz f=100MHz tstg Ta=100C Ta=25C 0.1 100 tf Ta=40C 100 tdon 0.01 10 tr 0.001 10 1 0 0.5 1 1.5 0.01 0.1 1 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) Fig.5 Gain bandwidth product Fig.6 Switching time Fig.4 Grounded emitter propagation vs. emitter current characteristics 1000 10 Ta=25C IC=0A f=1MHz 1 Cib 100 0.1 Cob 10 0.01 Ta=25C Single Pulse 1 0.001 0.1 1 10 100 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB V) ( COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance Fig.8 Safe Operating Area vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF) BASE SATURATION VOLTAGE : VBE (sat) (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) SWITCHING TIME : (ns) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)