2SD2661 Middle Power Transistor (12V / 2A) Datasheet llOutline SOT-89 Parameter Value SC-62 V 12V CEO I 2A C MPT3 llFeatures llInner circuit Low V 180mV CE(sat) (I /I =1A/50mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-89 2SD2661 4540 T100 180 12 1000 FW (MPT3) www.rohm.com 1/6 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved. 2SD2661 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 12 V CEO V Emitter-base voltage 6 V EBO I 2 A C Collector current *1 I 4 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage BV I = 10A Emitter-base breakdown voltage 6 - - V EBO E I V = 15V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB *4 Collector-emitter saturation voltage I = 1A, I = 50mA V - 90 180 mV C B CE(sat) *4 DC current gain V = 2V, I = 200mA 270 - 680 - h CE C FE V = 2V, I = -200mA, CE E *4 Transition frequency - 360 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 20 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.