2SD2670TL ROHM

0~0.1 2SD2670 Transistors Low frequency amplifier 2SD2670 z External dimensions (Unit : mm) z Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 z Features 1) A collector current is large. (1) (2) 2) V : max.250mV CE(sat) 0.95 0.95 0.16 At lc=1.5A / l =30mA B 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V IC 3 A Collector current 1 ICP 6 A 500 mW Power siddipation PC 2 1W Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=1ms t 2 Mounted on a 2525 0.8mm Ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 15 V IC=10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO 12 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=10A Collector cutoff current ICBO 100 nA VCB=15V Emitter cutoff current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 120 250 mV IC=1.5A, IB=30mA DC current gain hFE 270 680 VCE=2V, IC=500mA Transition frequency fT 360 MHz VCE=2V, IE=500mA, f=100MHz Collector output capacitance Cob 30 pF VCB=10V, IE=0A, f=1MHz Pulse 20190527-Rev.D 1/2 1.6 2.8 0.3~0.62SD2670 Transistors z Packaging specifications package Taping Type Code TL Quantity (pcs) 3000 2SD2670 z Electrical characteristic curves 1000 10 10 VCE=2V IC/IB=20/1 Ta=25 C Pulsed VCE=2V Pulsed Ta=25 C Ta=100 C Pulsed Ta=25 C 1 Ta=40 C Ta=45 C IC/IB=50/1 100 1 Ta=100 C IC/IB=10/1 0.1 IC/IB=20/1 10 0.01 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.3 Base-emitter saturation voltage Fig.2 Collector-emitter saturation voltage Fig.1 DC current gain vs. collector current vs.collector current vs. collector current 10 1000 1000 Ta=25 C IC=0A IC/IB=20/1 VCE=2V f=1MHz Pulsed f= 100MHz Ta=25 C Ta=100 C Ta=25 C 1 Cib Ta=45 C 0.1 100 100 Cob 0.01 0.001 10 10 0.1 1 10 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 EMITTER CURRENT : IE (A) BASE TO EMITTER CURRENT : VBE (V) EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.5 Gain bandwidth product Fig.4 Grounded emitter propagation Fig.6 Collector output capacitance vs. emitter current characteristics vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 20190527-Rev.D 2/2 COLLECTOR CURRENT :IC (A) DC CURRENT GAIN : hFE TRANSITION FREQUENCY : fT (MHz) COLLECTOR TO EMITTER CE(sat) (V) SATURATION VOLTAGE : V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) BASE SATURATION VOLTAGE : VBE(sat) (V)