X-On Electronics has gained recognition as a prominent supplier of 2SD2675TL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2675TL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2675TL ROHM

Hot 2SD2675TL electronic component of ROHM
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See Product Specifications
Part No.2SD2675TL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 30 V 1 A 320MHz 500 mW Surface Mount TSMT3
Datasheet: 2SD2675TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
259: USD 0.1572 ea
Line Total: USD 40.71 
Availability - 3613
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ: 259  Multiples: 1
Pack Size: 1
Availability Price Quantity
1610
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5016
10 : USD 0.3146
100 : USD 0.2596
500 : USD 0.209
1000 : USD 0.1936
3000 : USD 0.165
9000 : USD 0.1573
45000 : USD 0.154

3613
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 259
Multiples : 1
259 : USD 0.1572
500 : USD 0.1382
1000 : USD 0.1324
2000 : USD 0.1249

4217
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 186
Multiples : 1
186 : USD 1.0065
500 : USD 0.6268

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD2675TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2675TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SD2675 Datasheet General purpose amplification (30V, 1A) llOutline Parameter Value TSMT3 V 30V CEO I 1A C SOT-346T SC-96 llFeatures 1)A collector current is large. llInner circuit 2)Collector saturation voltage is low. V :max.350mV CE(sat) at I =500mA/I =25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD2675 TSMT3 2928 TL 180 8 3000 EU www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2675 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 I 2 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E I Collector cut-off current V = 30V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 120 350 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz *1 Pw=1ms Single pulse *2 Each Terminal Mounted on a Reference Land. *3 Mounted on a ceramic board.(25250.8mm) www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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