2SD2696 Datasheet Low frequency transistor (for amplification) llOutline Parameter Value VMT3 V 30V CEO I 400mA C SOT-723 SC-105AA llFeatures 1)The transistor of 400mA class which went only llInner circuit with 2012 size conventionally is attained in 1208 size. 2)Collector saturation voltage is low. V 300mV at I =100mA/I =2mA CE(sat) C B llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SD2696 VMT3 1212 T2L 180 8 8000 UH www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2696 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 400 mA C Collector current *1 I 800 mA CP *2 P Power dissipation 150 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E I Collector cut-off current V = 30V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 100mA, I = 2mA - 120 300 mV CE(sat) C B *3 DC current gain V = 2V, I = 100mA 270 - 680 - h FE CE C V = 2V, I = -100mA, CE E *3 Transition frequency - 400 - MHz f T f = 100MHz V = 10V, I = 0mA, CB E C Output capacitance - 3.0 - pF ob f = 1MHz *1 Pw=10ms, Single Pulse. *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.002