X-On Electronics has gained recognition as a prominent supplier of 2SD2703TL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD2703TL Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD2703TL ROHM

Hot 2SD2703TL electronic component of ROHM
2SD2703TL ROHM
2SD2703TL Bipolar Transistors - BJT
2SD2703TL Semiconductors

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See Product Specifications
Part No. 2SD2703TL
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT 30V 1A NPN LOW
Datasheet: 2SD2703TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
556: USD 0.1768 ea
Line Total: USD 98.3 
Availability - 2366
Ship by Wed. 19 Mar to Tue. 25 Mar
MOQ: 556  Multiples: 1
Pack Size: 1

 2SD2703TL More Buying Options & Price Grid(s)

Availability Price Quantity
3516
Ship by Mon. 17 Mar to Wed. 19 Mar
MOQ : 1
Multiples : 1
1 : USD 0.6437
10 : USD 0.5125
100 : USD 0.3197
500 : USD 0.2475
1000 : USD 0.2288
3000 : USD 0.1892

2366
Ship by Wed. 19 Mar to Tue. 25 Mar
MOQ : 556
Multiples : 1
556 : USD 0.1768
1000 : USD 0.1709

3627
Ship by Wed. 19 Mar to Tue. 25 Mar
MOQ : 399
Multiples : 1
399 : USD 0.2691
500 : USD 0.2301
1000 : USD 0.2184
2000 : USD 0.1962

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD2703TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2703TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SD2703 Datasheet General purpose amplification (30V, 1A) llOutline SOT-323T Parameter Value V 30V CEO I 1A C TUMT3 llFeatures llInner circuit 1)A collector current is large. 2)Collector-Emitter saturation voltage is low. V 350mV CE(sat) at I =500mA/I =25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323T 2SD2703 2021 TL 180 8 3000 EU (TUMT3) www.rohm.com 1/6 20150731 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SD2703 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 I 2 A CP *2 P 400 mW D Power dissipation *3 P 800 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E I Collector cut-off current V = 30V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 120 350 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz *1 Pw=1ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm ). www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20150731 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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