2SK2094 Transistors 4V Drive Nch MOS FET 2SK2094 z Structure z External dimensions (Unit : mm) Silicon N-channel MOS FET CPT3 6.5 5.1 2.3 0.5 z Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.75 4) 4V drive. 0.65 0.9 2.3 (1)Gate 5) Drive circuits can be simple. 2.3 (1) (2) (3) 0.5 (2)Drain 1.0 6) Parallel use is easy. (3)Source Abbreviated symbol : K2094 zApplications Switching z Packaging specifications z Inner circuit Package Taping Code TL Type Basic ordering unit 2500 (pieces) 2SK2094 (1) Gate (1) (2) (3) (2) Drain (3) Source z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS 20 V Continuous ID 2 A Drain current Pulsed IDP 8 A Continuous IDR 2 A Reverse drain current Pulsed IDRP 8 A Total power dissipation(Tc=25C) PD 10 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Pw 300s, Duty cycle 2% Rev.A 1/4 0.9 5.5 1.5 0.8Min. 2.5 1.5 9.52SK2094 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-source leakage IGSS 100 nA VGS= 20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 60 V ID=1mA, VGS=0V IDSS 100 A VDS=60V, VGS=0V Zero gate voltage drain current Gate threshold voltage VGS(th) 1.0 2.5 V VDS=10V, ID=1mA 0.3 0.35 ID=1A, VGS=10V Static drain-source on-state RDS(on) resistance 0.4 0.5 ID=1A, VGS=4V Forward transfer admittance Yfs 1.0 S VDS=10V, ID=1A Input capacitance Ciss 400 pF VDS=10V Output capacitance Coss 150 pF VGS=0V Reverse transfer capacitance Crss 50 pF f=1MHz td(on) 10 ns ID=1A, VDD=30V Turn-on delay time Rise time tr 20 ns VGS=10V Turn-off delay time td(off) 100 ns RL=30 Fall time tf 40 ns RG=10 Reverse recovery time (Body Diode) trr 100 ns IDR=2A, VGS=0V, di/dt=50A/s Rev.A 2/4