X-On Electronics has gained recognition as a prominent supplier of BC847BT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847BT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847BT116 ROHM

BC847BT116 electronic component of ROHM
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See Product Specifications
Part No.BC847BT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN 45V 1MA
Datasheet: BC847BT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
389: USD 0.1013 ea
Line Total: USD 39.41 
Availability - 414380
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ: 389  Multiples: 1
Pack Size: 1

 BC847BT116 More Buying Options & Price Grid(s)

Availability Price Quantity
1829
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 511
Multiples : 1
511 : USD 0.1864
1000 : USD 0.1803

2572
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 511
Multiples : 1
511 : USD 0.1864
1000 : USD 0.1803
2500 : USD 0.1749

414380
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 389
Multiples : 1
389 : USD 0.1013
500 : USD 0.0925
1000 : USD 0.0792
2000 : USD 0.075
6000 : USD 0.0702
12000 : USD 0.0659
24000 : USD 0.0622
96000 : USD 0.0565

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC847BT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847BT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

BC847B / BC847BU3 General purpose small signal amplifier Datasheet (50V, 150mA) llOutline Parameter Value SOT-23 SOT-323 V 45V CEO I 100mA C BC847B BC847BU3 (SST3) (UMT3) llFeatures llInner circuit 1)BV >45V(I =1mA) CEO C 2)Complements the BC857B/BC857BU3. llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BC847B 2924 T116 180 8 3000 G1F (SST3) SOT-323 BC847BU3 2021 T106 180 8 3000 G1F (UMT3) www.rohm.com 1 / 7 20190128 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. BC847B / BC847BU3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 45 V CEO V Emitter-base voltage 6 V EBO I Collector current 100 mA C *1 P 200 mW D BC847B *2 P Power dissipation 350 mW D P BC847BU3 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 45 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 6 - - V EBO E V = 30V - - 15 nA CB Collector cut-off current I CBO V = 30V, T = 150 - - 5 A CB a V 1 I = 10mA, I = 0.5mA - - 250 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = 100mA, I = 5mA - - 600 mV CE(sat) C B Base-emitter turn V V = 5V, I = 10mA 580 - 770 mV BE(on) CE C on voltage h DC current gain V = 5V, I = 2mA 200 - 450 - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = 10V, I = 0A CB E C Output capacitance - 3.0 - pF ob f = 1MHz V = 0.5V, I = 0A BE C C Input capacitance - 8.0 - F ib f = 1MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm) www.rohm.com 2/7 20190128 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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