BC847BU3HZG Datasheet NPN General purpose transistor AEC-Q101 Qualified llOutline SOT-323 Parameter Value SC-70 V 45V CEO I 100mA C UMT3 llFeatures llInner circuit 1)BV >45V(I =1mA) CEO C 2)Complements the BC857BU3 HZG. llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 BC847BU3HZG 2021 T106 180 8 3000 G1F (UMT3) www.rohm.com 1/6 20181228 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. BC847BU3 HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 45 V CEO V Emitter-base voltage 6 V EBO I Collector current 100 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 45 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 6 - - V EBO E V = 30V - - 15 nA CB I Collector cut-off current CBO V = 30V, T = 150 - - 5 A CB a V 1 I = 10mA, I = 0.5mA - - 250 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = 100mA, I = 5mA - - 600 mV CE(sat) C B Base-emitter turn V V = 5V, I = 10mA 580 - 700 mV BE(on) CE C on voltage h DC current gain V = 5V, I = 2mA 200 - 450 - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = 10V, I = 0A CB E C Output capacitance - 3.0 - pF ob f = 1MHz V = 0.5V, I = 0A BE C C Input capacitance - 8.0 - pF ib f = 1MHz *1 Each terminal mounted on a reference land. www.rohm.com 2/6 20181228 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.
