X-On Electronics has gained recognition as a prominent supplier of BC847BU3HZGT106 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847BU3HZGT106 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847BU3HZGT106 ROHM

BC847BU3HZGT106 electronic component of ROHM
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Part No.BC847BU3HZGT106
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN GENERAL PURPOSE TRANS
Datasheet: BC847BU3HZGT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1981 ea
Line Total: USD 0.2 
Availability - 6630
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 BC847BU3HZGT106 More Buying Options & Price Grid(s)

Availability Price Quantity
6630
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1981
10 : USD 0.1352
100 : USD 0.0618
1000 : USD 0.0564
3000 : USD 0.0511
9000 : USD 0.0404
24000 : USD 0.0404
45000 : USD 0.0384
99000 : USD 0.0351

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC847BU3HZGT106 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847BU3HZGT106 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

BC847BU3HZG Datasheet NPN General purpose transistor AEC-Q101 Qualified llOutline SOT-323 Parameter Value SC-70 V 45V CEO I 100mA C UMT3 llFeatures llInner circuit 1)BV >45V(I =1mA) CEO C 2)Complements the BC857BU3 HZG. llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 BC847BU3HZG 2021 T106 180 8 3000 G1F (UMT3) www.rohm.com 1/6 20181228 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. BC847BU3 HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 45 V CEO V Emitter-base voltage 6 V EBO I Collector current 100 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 45 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 6 - - V EBO E V = 30V - - 15 nA CB I Collector cut-off current CBO V = 30V, T = 150 - - 5 A CB a V 1 I = 10mA, I = 0.5mA - - 250 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = 100mA, I = 5mA - - 600 mV CE(sat) C B Base-emitter turn V V = 5V, I = 10mA 580 - 700 mV BE(on) CE C on voltage h DC current gain V = 5V, I = 2mA 200 - 450 - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = 10V, I = 0A CB E C Output capacitance - 3.0 - pF ob f = 1MHz V = 0.5V, I = 0A BE C C Input capacitance - 8.0 - pF ib f = 1MHz *1 Each terminal mounted on a reference land. www.rohm.com 2/6 20181228 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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