X-On Electronics has gained recognition as a prominent supplier of BC848BHZGT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC848BHZGT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC848BHZGT116 ROHM

BC848BHZGT116 electronic component of ROHM
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Part No.BC848BHZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN SOT-23 0.1A 200 to 450hFE 30V
Datasheet: BC848BHZGT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.121 ea
Line Total: USD 0.12 
Availability - 7806
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 BC848BHZGT116 More Buying Options & Price Grid(s)

Availability Price Quantity
7806
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.121
10 : USD 0.0814
100 : USD 0.0363
1000 : USD 0.0319
3000 : USD 0.0308
9000 : USD 0.0231
24000 : USD 0.0198
99000 : USD 0.0187

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC848BHZGT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC848BHZGT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

BC848B HZG Datasheet NPN General purpose transistor AEC-Q101 Qualified llOutline SOT-23 Parameter Value V 30V CEO I 100mA C SST3 llFeatures llInner circuit 1)BV minimum is 30V (I =1mA) CEO C 2)Complements the BC858B HZG llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BC848B HZG 2924 T116 180 8 3000 G1K (SST3) www.rohm.com 1/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. BC848B HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D T Junction temperature 150 j T Range of storage temperature -65 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E V = 30V - - 100 nA CB Collector cut-off current I CBO V = 30V, T = 150 - - 5 A CB a V 1 I = 10mA, I = 0.5mA - - 250 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = 100mA, I = 5mA - - 600 mV CE(sat) C B Base-emitter turn V V = 5V, I = 10mA 580 - 770 mV BE(on) CE C on voltage h DC current gain V = 5V, I = 2mA 200 - 450 - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = 10V, I = 0A CB E C Output capacitance - 3.0 - pF ob f = 1MHz V = 0.5V, I = 0A BE C C Input capacitance - 8.0 - F ib f = 1MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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RHM
ROHM Semicon
ROHM Semiconductor

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