BC848BWT106 ROHM

BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B z Features z External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW 2) Complements the BC858B / BC858BW. 2.00.2 1.30.1 0.90.1 0.65 0.65 0.70.1 0.2 (1) (2) 0~0.1 (3) +0.1 0.3 (1) Emitter 0 0.150.05 (2) Base ROHM : UMT3 All terminals have same dimensions EIAJ : SC-70 (3) Collector BC848B, BC848C 2.90.2 +0.2 0.95 0.1 1.90.2 0.450.1 0.95 0.95 (1) (2) 0~0.1 0.2Min. (3) +0.1 0.15 +0.1 0.06 0.4 0.05 (1) Emitter (2) Base All terminals have same dimensions (3) Collector ROHM : SST3 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 0.1 A 0.2 W BC848BW Collector power PC 0.2 W dissipation BC848B 0.35 W Junction temperature Tj 150 C Storage temperature Tstg 65~+150 C When mounted on a 750.6mm ceramic board. z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC=50A Collector-emitter breakdown voltage BVCEO 30 V IC=1mA Emitter-base breakdown voltage BVEBO 5 V IE=50A nA 100 VCB=30V Collector cutoff current ICBO 5 A VCB=30V, Ta=150C 0.25 IC/IB=10mA/0.5mA Collector-emitter saturation voltage VCE(sat) V 0.6 IC/IB=100mA/5mA Base-emitter saturation voltage VBE(on) 0.58 0.77 V VCE/IC=5V/10mA DC current transfer ratio hFE 200 450 VCE/IC=5V/2mA Transition frequency fT 200 MHz VCE=5V, IE=20mA, f=100MHz Collector output capacitance Cob 3 pF VCB=10V, IE=0, f=1MHz Collector output capacitance Cib 8 pF VEB=0.5V, IE=0, f=1MHz (SPEC-C22) Rev.A 1/5 1.250.1 +0.2 1.3 0.1 2.10.1 2.40.2 0.1~0.4BC848BW / BC848B Transistors z Packaging specifications Part No. BC848BW BC848B Packaging type UMT3 SST3 Marking G1K G1K Code T106 T116 Basic ordering unit (pieces) 3000 3000 z Electrical characteristic curves 10.0 100 35 Ta=25C 30 8.0 80 25 6.0 60 20 15 4.0 40 10 0.1 2.0 20 5 IB=0A Ta=25C IB=0mA 0 0 0 1.0 2.0 0 1.0 2.0 VCE-COLLECTOR-EMITTER VOLTAGE (V) VCECOLLECTOR-EMITTER VOLTAGE (V) Fig.2 Grounded emitter output Fig.1 Grounded emitter output characteristics ( ) characteristics ( ) 1000 Ta=25C VCE=10V 1V 5V 100 10 0.1 1.0 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.3 DC current gain vs. collector current ( ) 1000 VCE=5V Ta=125C Ta=25C Ta=55C 100 10 0.1 1.0 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.4 DC current gain vs. collector current ( ) Rev.A 2/5 0.4 0.2 1.2 1.0 0.8 0.6 hFE-DC CURRENT GAIN hFE-DC CURRENT GAIN ICCOLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA)