X-On Electronics has gained recognition as a prominent supplier of BC857BT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857BT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857BT116 ROHM

BC857BT116 electronic component of ROHM
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See Product Specifications
Part No.BC857BT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT PNP 45V 1MA
Datasheet: BC857BT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2794 ea
Line Total: USD 0.28 
Availability - 6826
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 BC857BT116 More Buying Options & Price Grid(s)

Availability Price Quantity
6826
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2794
10 : USD 0.1683
100 : USD 0.0781
1000 : USD 0.0693
3000 : USD 0.0539
9000 : USD 0.0451
45000 : USD 0.0418
99000 : USD 0.0396

1838
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 926
Multiples : 1
926 : USD 0.1061
1000 : USD 0.1026

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC857BT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857BT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

BC857B / BC857BU3 Datasheet PNP General purpose transistor llOutline Parameter Value SOT-23 SOT-323 V -45V CEO I -100mA C BC857B BC857BU3 (SST3) (UMT3) llFeatures llInner circuit 1)BV >45V(I =1mA) CEO C 2)Complements the BC847B/BC847BU3 llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BC857B 2021 T106 180 8 3000 G3F (SST3) SOT-323 BC857BU3 2120 T106 180 8 3000 G3F (UMT3) www.rohm.com 1 / 7 20190128 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. BC857B / BC857BU3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -45 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1 P 200 mW D BC857B *2 P Power dissipation 350 mW D *1 P BC857BU3 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -45 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E V = -30V - - -15 nA CB Collector cut-off current I CBO V = -30V, T = 150 - - -4 A CB a V 1 I = -10mA, I = -0.5mA - - -300 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = -100mA, I = -5mA - - -650 mV CE(sat) C B Base-emitter turn V V = -5V, I = -10mA -600 - -750 mV BE(on) CE C on voltage h DC current gain V = -5V, I = -2mA 210 - 480 - FE CE C V = -5V, I = 20mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = -10V, I = 0A CB E C Output capacitance - 4.5 - pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/7 20190128 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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