BC858BWT106 ROHM

BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B z External dimensions (Unit : mm) z Features 1) BVCEO < -30V (IC=-1mA) BC858BW 2) Complements the BC848B / BC848BW. 2.00.2 1.30.1 0.90.1 0.65 0.65 0.2 0.70.1 (1) (2) 00.1 z Package, marking and packaging specifications (3) Paet No. BC858BW BC858B (1) Emitter +0.1 Pakaging type UMT3 SST3 ROHM : UMT3 0.3 (2) Base -0 0.150.05 Marking G3K G3K EIAJ : EC-70 (3) Collector All terminals have same dimensions T106 T116 Code Basic ordering unit (pieces) 3000 3000 BC858B 2.90.2 +0.2 0.95 0.1 1.90.2 0.450.1 0.95 0.95 z Absolute maximum ratings (Ta=25C) (1) (2) 0~0.1 Parameter Symbol Limits Unit 0.2Min. Collector-base voltage VCBO 30 V (3) Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO V +0.1 5 0.15 (1) Emitter +0.1 0.06 0.4 IC 0.05 Collector current 0.1 A (2) Base ROHM : SST3 All terminals have same dimensions 0.2 (3) Collector Collector power dissipation PC W 0.35 Junction temperature Tj 150 C Storage temperature Tstg 65 to +150 C When mounted on 7 5 0.6 mm ceramic board. z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC= 50A Collector-emitter breakdown voltage BVCEO 30 V IC= 1mA Emitter-base breakdown voltage BVEBO 5 V IE= 50A 100 nA VCB= 30V Collector cutoff current ICBO 4 A VCB= 30V, Ta=150C 0.3 V IC/IB= 10mA/0.5mA Collector-emitter saturation voltage VCE(sat) 0.65 V IC/IB= 100mA/5mA 0.6 0.75 V VCE/IC= 5V/10mA Base-emitter saturation voltage VBE(on) DC current transfer ratio hFE 210 480 VCE/IC= 5V/2mA Transition frequency fT 250 MHz VCE= 5V , IE=20mA , f=100MHz Output capacitance Cob 4.5 pF VCB= 10V , IE=0 , f=1MHz z Electrical characteristics curves 0.7 100 10.0 Ta=25C Ta=25C 0.5 50 0.6 45 80 8.0 40 0.4 35 60 6.0 30 0.3 25 40 4.0 20 0.2 15 20 2.0 10 0.1 5 I =0mA B 1 =0A B 0 0 0 1.0 2.0 0 1.0 2.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output characteristics ( I ) characteristics ( II ) Rev.A 1/4 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1.20.1 +0.2 1.3 - 0.1 2.10.1 2.40.2 0.1~0.4BC858BW / BC858B Transistors 500 Ta=25C V =10V CE 5V 100 1V 10 5 0.1 1.0 10 100 1000 COLLECTOR CURRENT : IC(mA) Fig.3 DC current gain vs. collector current ( I ) 500 VCE=5V Ta=125C Ta=25C 100 Ta=-55C 10 5 0.1 1.0 10 100 1000 COLLECTOR CURRENT : IC(mA) Fig.4 DC current gain vs. collector current ( II ) 500 Ta=25C VCE=5V f=1kHz 100 10 5 0.01 0.1 1.0 10 100 COLLECTOR CURRENT : IC(mA) Fig.5 AC current gain vs. collector current Rev.A 2/4 DC CURRENT GAIN : hFE AC CURRENT GAIN : hFE DC CURRENT GAIN : hFE