X-On Electronics has gained recognition as a prominent supplier of BCX17HZGT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCX17HZGT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCX17HZGT116 ROHM

BCX17HZGT116 electronic component of ROHM
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See Product Specifications
Part No.BCX17HZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS DIGITAL PNP
Datasheet: BCX17HZGT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3887 ea
Line Total: USD 0.39

Availability - 7189
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
89
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.596
10 : USD 0.4856
30 : USD 0.4376
100 : USD 0.3793
500 : USD 0.3522
1000 : USD 0.3355

7189
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3887
10 : USD 0.2668
100 : USD 0.1115
1000 : USD 0.092
3000 : USD 0.0747
9000 : USD 0.0621
24000 : USD 0.0598
45000 : USD 0.0552
99000 : USD 0.0541

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCX17HZGT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCX17HZGT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCX17 HZG Datasheet PNP small signal transistor AEC-Q101 Qualified llOutline SOT-23 Parameter Value V -50V CES I -500mA C SST3 llFeatures llInner circuit 1)High gain and low saturation voltage. 2)Ideal for small load switching applications. 3)Complements the BCX19 HZG. llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BCX17 HZG 2924 T116 180 8 3000 GT1 (SST3) www.rohm.com 1/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. BCX17 HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V -50 V CES Collector-emitter voltage V -45 V CEO Emitter-base voltage V -5 V EBO I -500 mA C Collector current I -1 A CP *1 P 200 mW D *2 Power dissipation P 350 mW D *3 P 425 mW D Junction temperature T 150 j T Range of storage temperature -65 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = -50A -50 - - V CES C Collector-emitter breakdown voltage BV I = -10mA -45 - - V CEO C Emitter-base breakdown voltage BV I = -50A -5 - - V EBO E V = -20V - - -100 nA CB Collector cut-off current I CBO V = -20V, T = 150 - - -5 A CB a Emitter cut-off current I V = -5V - - -10 A EBO EB Collector-emitter saturation voltage V I = -500mA, I = -50mA - - -620 mV CE(sat) C B Base-emitter turn V V = -1V, I = -500mA - - -1.2 V BE(on) CE C on voltage h 1 V = -1V, I = -100mA 100 - 600 FE CE C h 2 DC current gain V = -1V, I = -300mA 70 - - - FE CE C h 3 V = -1V, I = -500mA 40 - - FE CE C V = -5V, I = 20mA, CE E f Transition frequency - 200 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). *3 Mounted on a ceramic board(15150.6mm). www.rohm.com 2/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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